Abstract

An approximate analytic equation is derived that describes the law of elongation of a semiconductor nanowire (NW) growing via the vapor–liquid–solid (VLS) mechanism in a substrate plane. Various growth regimes are theoretically analyzed as dependent on NW radius R and epitaxial deposition conditions. It is established that the growth rate of planar NWs can be controlled either by the Gibbs–Thomson effect (in the case of small catalyst droplet dimensions) or by the diffusion of adatoms from the substrate surface (for increasing radius of the crystal). Dependence of the diffusion-controlled growth rate on radius R obeys the R^–m law, where the power exponent takes the values of 1, 3/2, or 2 depending on the character of surface diffusion.

中文翻译：

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平面纳米线的生长动力学

摘要

推导了一个近似的解析方程，该方程描述了通过汽-液-固（VLS）机理在衬底平面中生长的半导体纳米线（NW）的伸长定律。从理论上分析了各种生长方式，具体取决于NW半径R和外延沉积条件。已经确定，可以通过吉布斯-汤姆森效应（在小催化剂液滴尺寸的情况下）或通过原子从基体表面的扩散（用于增加晶体的半径）来控制平面NW的生长速率。扩散控制的增长率对半径R的依赖性服从R ^{– m} 定律，根据表面扩散的特性，幂指数取值为1、3 / 2或2。