A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm² is fabricated in this paper. Charge-field-modulated junction termination extension (CFM-JTE) has been proposed for satisfying the requirement of ultra-high reverse voltage, which enlarges the JTE dose tolerance window, making it approximately 2.8 times that of the conventional two-zone JTE. Besides, the CFM-JTE can be implemented through the conventional two-zone JTE process. The measured forward current is up to 100 A @ V_F = 5.2 V in the absence of carrier lifetime enhancement technology. The CFM-JTE structure accomplishes 96% of the theoretical breakdown voltage of the parallel plane junction with a relatively small terminal area of 400 μm, which contributes to achieving the Baliga’s figure of merit of 58.8 GW/cm².

本文制造了一个有效面积为0.1 cm ²的13.5 kV 4H-SiC PiN整流器。为了满足超高反向电压的要求，已经提出了电荷场调制结终止扩展（CFM-JTE），这扩大了JTE剂量耐受范围，使其约为传统两区JTE的2.8倍。此外，CFM-JTE可以通过传统的两区JTE工艺实现。测量的正向电流最高为100 A @ V _F 在没有载流子寿命增强技术的情况下，电压为5.2V。CFM-JTE结构以400μm的相对较小端子面积实现了平行平面结的理论击穿电压的96％，这有助于实现Baliga的品质因数58.8 GW / cm ²。