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CsPbBr x I 3-x thin films with multiple ammonium ligands for low turn-on pure-red perovskite light-emitting diodes
Nano Research ( IF 9.5 ) Pub Date : 2020-09-26 , DOI: 10.1007/s12274-020-3065-5
Maowei Jiang , Zhanhao Hu , Luis K. Ono , Yabing Qi

All-inorganic α-CsPbBrxI3-x perovskites featuring nano-sized crystallites show great potential for pure-red light-emitting diode (LED) applications. Currently, the CsPbBrxI3–x LEDs based on nano-sized α-CsPbBrxI3-x crystallites have been fabricated mainly via the classical colloidal route including a tedious procedure of nanocrystal synthesis, purification, ligand or anion exchange, film casting, etc. With the usually adopted conventional LED device structure, only high turn-on voltages (> 2.7) have been achieved for CsPbBrxI3-x LEDs. Moreover, this mix-halide system may suffer from severe spectra-shift under bias. In this report, CsPbBrxI3-x thin films featuring nano-sized crystallites are prepared by incorporating multiple ammonium ligands in a one-step spin-coating route. The multiple ammonium ligands constrain the growth of CsPbBrxI3-x nanograins. Such CsPbBrxI3-x thin films benefit from quantum confinement. The corresponding CsPbBrxI3-x LEDs, adopting a conventional LED structure of indium-doped tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/CsPbBrxI3-x/[6, 6]-phenyl C61 butyric acid methyl ester (PCBM)/bathocuproine (BCP)/Al, emit pure-red color at Commission Internationale de l’éclairage (CIE) coordinates of (0.709, 0.290), (0.711, 0.289), etc., which represent the highest color-purity for reported pure-red perovskite LEDs and meet the Rec. 2020 requirement at CIE (0.708, 0.292) very well. The CsPbBrxI3-x LED shows a low turn-on voltage of 1.6 V, maximum external quantum efficiency of 8.94%, high luminance of 2,859 cdm−2, and good color stability under bias.



中文翻译:

具有多个铵配体的CsPbBr x I 3-x薄膜,用于低导通的纯红色钙钛矿发光二极管

所有无机α-CsPbBr X3- X钙钛矿设有纳米尺寸的微晶显示纯红色发光二极管(LED)的应用的巨大潜力。目前,CsPbBr X3- X LED的基于纳米尺寸的α-CsPbBr X3- X微晶已经通过包括纳米晶体合成,纯化的繁琐过程经典胶体路线主要制造,配位体或阴离子交换,膜流延使用通常采用的常规LED器件结构,对于CsPbBr x I 3- x仅实现了高开启电压(> 2.7)。发光二极管。而且,该混合卤化物系统在偏压下可能遭受严重的光谱偏移。在此报告中,通过一步旋涂方式掺入多个铵配体,制备了具有纳米微晶的CsPbBr x I 3- x薄膜。多个铵配体限制了CsPbBr x I 3- x纳米颗粒的生长。这种CsPbBr x I 3- x薄膜受益于量子限制。相应的CsPbBr x I 3- x LED,采用掺杂铟锡氧化物(ITO)/聚(3,4-乙撑二氧噻吩):聚(苯乙烯磺酸盐)(PEDOT:PSS)/ CsPbBr x的常规LED结构I 3- x / [6,6]-苯基C61丁酸甲酯(PCBM)/巴果嘌呤(BCP)/ Al,在国际照明委员会(CIE)坐标为(0.709,0.290)时发出纯红色,(0.711,0.289)等,代表报道的纯红色钙钛矿LED的最高色纯度,并符合Rec。CIE的2020年要求(0.708,0.292)非常好。CsPbBr x I 3- x LED显示出1.6 V的低开启电压,8.94%的最大外部量子效率,2,859 cdm -2的高亮度以及在偏压下的良好色彩稳定性。

更新日期:2020-11-12
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