There are many studies on the solution-processed thin-film transistor (TFT) using transition metal dichalcogenide (TMD) materials. However, it is hard to control the electrical property of chemically exfoliated TMD materials compared to the chemical vapor deposition TMD. An investigation into the electrical modulation behavior of exfoliated two-dimensional (2D) material is important to fabricate well-modulated electronic devices via solution processing. Here, we report the effects of reactivity of organic dopants on MoS₂ and investigate how the chemical doping behavior influences the electrical properties of MoS₂. The band state of dopants, which is related to the electron-withdrawing and donating behavior of chemical dopant, provides a proportional shift in the threshold voltages (V_th) of their field-effect transistors (FETs). However, on/off current ratio (I_on/I_off) and mobility (µ) are strongly influenced by the defect density depending on the reactivity of doping reaction, rather than the band state of organic dopants. Through the in-depth study on the doping reaction, we fabricate a FET and a TFT, having high mobility and a relatively high on/off ratio (10⁴) using a solution process.

对于使用过渡金属二卤化物（TMD）材料进行溶液处理的薄膜晶体管（TFT）的研究很多。然而，与化学气相沉积TMD相比，难以控制化学剥离的TMD材料的电性能。剥落的二维（2D）材料的电调制行为的研究对于通过溶液处理制造良好调制的电子设备很重要。在这里，我们报告有机掺杂剂对MoS ₂的反应性的影响，并研究化学掺杂行为如何影响MoS ₂的电性能。掺杂剂的能带状态与化学掺杂剂的吸电子和给电子行为有关，它提供阈值电压的比例偏移（V _th）的场效应晶体管（FET）。然而，取决于掺杂反应的反应性而不是有机掺杂剂的能带状态，缺陷密度严重地影响开/关电流比（I _on / I _off）和迁移率（μ）。通过对掺杂反应的深入研究，我们通过溶液法制备了具有高迁移率和相对较高的开/关比（10 ⁴）的FET和TFT 。