Highly faceted geometries such as nanowires are prone to form self-formed features, especially those that are driven by segregation. Understanding these features is important in preventing their formation, understanding their effects on nanowire properties, or engineering them for applications. Single elemental segregation lines that run along the radii of the hexagonal cross-section have been a common observation in alloy semiconductor nanowires. Here, in GaAsP nanowires, two additional P rich bands are formed on either side of the primary band, resulting in a total of three segregation bands in the vicinity of three of the alternating radii. These bands are less intense than the primary band and their formation can be attributed to the inclined nanofacets that form in the vicinity of the vertices. The formation of the secondary bands requires a higher composition of P in the shell, and to be grown under conditions that increase the diffusivity difference between As and P. Furthermore, it is observed that the primary band can split into two narrow and parallel bands. This can take place in all six radii, making the cross sections to have up to a maximum of 18 radial segregation bands. With controlled growth, these features could be exploited to assemble multiple different quantum structures in a new dimension (circumferential direction) within nanowires.

高度切面的几何结构（例如纳米线）易于形成自形成的特征，尤其是那些由隔离驱动的特征。了解这些功能对于防止其形成，了解其对纳米线性能的影响或对它们进行工程设计以实现应用非常重要。在合金半导体纳米线中，普遍观察到沿着六边形横截面半径的单元素隔离线。在这里，在GaAsP纳米线中，两个附加的P富集带形成在主带的任一侧，从而在三个交变半径附近产生了总共三个隔离带。这些条带的强度小于主条带，其形成可归因于在顶点附近形成的倾斜纳米面。次级带的形成需要壳中较高的P成分，并且要在增加As和P之间扩散系数差异的条件下生长。此外，可以观察到初级带可以分为两个窄且平行的带。这可以在所有六个半径上进行，从而使横截面最多具有18个径向隔离带。通过受控的生长，可以利用这些特征在纳米线内以新的尺寸（周向）组装多个不同的量子结构。使横截面最多具有18个径向隔离带。通过受控的生长，可以利用这些特征在纳米线内以新的尺寸（周向）组装多个不同的量子结构。使横截面最多具有18个径向隔离带。通过受控的生长，可以利用这些特征在纳米线内以新的尺寸（周向）组装多个不同的量子结构。