The effect of hydrogen on Pt/GaN Schottky diodes was studied using current–voltage (I–V), capacitance–voltage (C–V), and impedance spectroscopy measurements. The results showed that hydrogen exposure reduced the Schottky barrier height and the resistance of the semiconductor space-charge region but did not affect the ideality factor, carrier concentration, or capacitance of the semiconductor space-charge region. Exposure to dry air restored the I–V curves, 1/C ²–V curves, and Nyquist plots to the original values more rapidly than exposure to pure N₂, suggesting that Pt functioned as a catalyst. Hydrogen-induced changes in the properties of the Pt/GaN interface oxide may be related to these phenomena.

（使用的电流-电压进行了研究氢在Pt / GAN肖特基二极管的影响我- V），电容-电压（C ^ - V），和阻抗谱测量。结果表明，氢的暴露降低了肖特基势垒高度和半导体空间电荷区的电阻，但是没有影响半导体空间电荷区的理想因子，载流子浓度或电容。暴露于干燥空气比暴露于纯N ₂更快地恢复了I – V曲线，1 / C ² – V曲线和奈奎斯特曲线，使其恢复到原始值。，表明铂起到催化剂的作用。氢致Pt / GaN界面氧化物的性质变化可能与这些现象有关。