This paper demonstrates a 1 V_pp low-driving-voltage silicon electro-absorption modulator (EAM) utilizing a Schottky diode. Optical modulation using a Schottky diode was achieved through the intensity change of the guiding light due to free-carrier absorption in the semiconductor to change its absorption coefficient, not through conventional interference effects. The proposed EAM consists of a lateral metal–semiconductor junction that helps maximize free-carrier injection and extraction through a Schottky contact on rib waveguide. In order to achieve high-speed operation, traveling-wave type electrodes were designed. The fabricated EAM demonstrates a broad operational wavelength range of 50nm for C-band with a uniform extinction ratio (ER) of 3.9dB, even for a compact modulation length of 25μm with a driving voltage of 1 V_pp. Also, the traveling-wave type electrodes enabled the modulator to operate at up to 26GHz with 13.2GHz of 3 dB electro-optic bandwidth experimentally.

本文展示了一种利用肖特基二极管的 1 V _pp低驱动电压硅电吸收调制器 (EAM)。使用肖特基二极管的光调制是通过半导体中自由载流子吸收引起的引导光的强度变化来实现的，从而改变其吸收系数，而不是通过传统的干涉效应。拟议的 EAM 由横向金属-半导体结组成，有助于通过肋形波导上的肖特基接触最大限度地注入和提取自由载流子。为了实现高速操作，设计了行波型电极。制造的 EAM 展示了 C 波段 50nm 的宽工作波长范围，均匀消光比 (ER) 为 3.9dB，即使对于 25 μ的紧凑调制长度也是如此m 的驱动电压为 1 V _pp。此外，行波型电极使调制器能够在高达 26GHz 的频率下以 13.2GHz 的 3 dB 电光带宽进行实验。