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Isomorphous Substitution Synthesis and Photoelectric Properties of Spinel AgInSnS4 Nanosheets
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-11-06 , DOI: 10.1021/acs.chemmater.0c03404 Qinghuan Bian 1 , Shuijin Lei 1 , Kehan Zhao 1 , Qunying Tu 1 , Liang Zhao 1 , Lihui Rao 1 , Yanhe Xiao 1 , Baochang Cheng 1
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-11-06 , DOI: 10.1021/acs.chemmater.0c03404 Qinghuan Bian 1 , Shuijin Lei 1 , Kehan Zhao 1 , Qunying Tu 1 , Liang Zhao 1 , Lihui Rao 1 , Yanhe Xiao 1 , Baochang Cheng 1
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Multinary metal chalcogenides, a remarkable class of materials for designing multifunctionality, possess a broad variety of physical and chemical properties and hold a great promise for a wide range of potential applications. As a typical quaternary I–III–IV–VI4 group semiconductor, spinel AgInSnS4 has only received extremely limited attention probably due to difficulty in synthesis. In this work, for the first time, AgInSnS4 nanocrystals have been successfully fabricated via a simple isomorphous substitution approach using spinel indium sulfide as the parent material. The prepared AgInSnS4 nanosheets perfectly maintain the cubic spinel structure. The optical absorption results show that the obtained spinel AgInSnS4 nanocrystals exhibit strong absorption in the visible-light region and have a direct band gap of about 1.54 eV. The band structure analysis indicates that the AgInSnS4 product should display p-type conduction. Photocurrent measurements reveal that the spin-coated thin film of AgInSnS4 nanosheets can exhibit a broad, sensitive, fast, and stable photoelectric response. The favorable optical and photocurrent properties suggest a significant potential of the prepared spinel AgInSnS4 nanocrystals for applications in photovoltaics and other optoelectronic devices.
中文翻译：
尖晶石AgInSnS 4纳米片的同构取代合成及光电性能
多元金属硫属化物是设计多功能性的非凡材料，具有多种物理和化学性质，对于广泛的潜在应用具有广阔的前景。尖晶石AgInSnS 4作为典型的I-III-IV-VI 4季四族半导体，仅由于合成困难而受到的关注非常有限。在这项工作中，首次使用尖晶石型硫化铟作为母体材料，通过简单的同构取代方法成功地制备了AgInSnS 4纳米晶体。制备的AgInSnS 4纳米片完美地保持了立方尖晶石结构。光学吸收结果表明，所得到的尖晶石AgInSnS 4纳米晶体在可见光区域表现出强吸收性，并具有约1.54 eV的直接带隙。能带结构分析表明，AgInSnS 4产物应显示p型导电。光电流测量表明，AgInSnS 4纳米片的旋涂薄膜可以表现出广泛，敏感，快速和稳定的光电响应。良好的光学和光电流特性表明，所制备的尖晶石AgInSnS 4纳米晶体具有巨大的潜力，可用于光伏和其他光电设备。
更新日期：2020-11-25
中文翻译：
尖晶石AgInSnS 4纳米片的同构取代合成及光电性能
多元金属硫属化物是设计多功能性的非凡材料，具有多种物理和化学性质，对于广泛的潜在应用具有广阔的前景。尖晶石AgInSnS 4作为典型的I-III-IV-VI 4季四族半导体，仅由于合成困难而受到的关注非常有限。在这项工作中，首次使用尖晶石型硫化铟作为母体材料，通过简单的同构取代方法成功地制备了AgInSnS 4纳米晶体。制备的AgInSnS 4纳米片完美地保持了立方尖晶石结构。光学吸收结果表明，所得到的尖晶石AgInSnS 4纳米晶体在可见光区域表现出强吸收性，并具有约1.54 eV的直接带隙。能带结构分析表明，AgInSnS 4产物应显示p型导电。光电流测量表明，AgInSnS 4纳米片的旋涂薄膜可以表现出广泛，敏感，快速和稳定的光电响应。良好的光学和光电流特性表明，所制备的尖晶石AgInSnS 4纳米晶体具有巨大的潜力，可用于光伏和其他光电设备。
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