Laser‐ and Ion‐Induced Defect Engineering in WS2 Monolayers,Physica Status Solidi-Rapid Research Letters

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Laser‐ and Ion‐Induced Defect Engineering in WS2 Monolayers
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-11-07 , DOI: 10.1002/pssr.202000466
Aswin Asaithambi ₁ , Roland Kozubek ₁ , Günther M. Prinz ₁ , Francesco Reale ₂ , Erik Pollmann ₁ , Marcel Ney ₁ , Cecilia Mattevi ₂ , Marika Schleberger ₁ , Axel Lorke ₁

Affiliation

Tungsten disulfide is one of the prominent transition metal dichalcogenide materials, which shows a transition from an indirect to a direct bandgap as the layer thickness is reduced down to a monolayer. To use

{WS}_{2}

monolayers in devices, detailed knowledge about the luminescence properties regarding not only the excitonic but also the defect‐induced contributions is needed. Herein,

{WS}_{2}

monolayers are irradiated with

{Xe}^{30 +}

ions with different fluences to create different defect densities. Apart from the excitonic contributions, two additional emission bands are observed at low temperatures. These bands can be reduced or even suppressed, if the flakes are exposed to laser light with powers up to 1.5 mW. Increasing the temperature up to room temperature leads to recovery of this emission, so that the luminescence properties can be modified using laser excitation and temperature. The defect bands emerging after ion irradiation are attributed to vacancy defects together with physisorbed adsorbates at different defect sites.

中文翻译：

WS2单层中的激光和离子诱导缺陷工程

二硫化钨是最著名的过渡金属二卤化钨材料之一，随着层厚减小到单层，它显示出从间接带隙到直接带隙的转变。使用

{WS}_{2}

器件中的单分子层，不仅需要有关激子的发光性质的详细知识，而且还需要有关缺陷引起的贡献的详细知识。在这里

{WS}_{2}

单层被辐照

e^{30 +}

不同通量的离子产生不同的缺陷密度。除激子作用外，在低温下还观察到另外两个发射带。如果薄片暴露在功率高达1.5 mW的激光下，则这些频带可以减小甚至抑制。将温度升高到室温会导致这种发射的恢复，因此可以使用激光激发和温度来改变发光特性。离子辐照后出现的缺陷带归因于空位缺陷以及不同缺陷位置处的物理吸附吸附物。

更新日期：2021-01-13

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