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t‐ZrO2 toughened Al2O3 free‐standing films and as oxidation mitigating thin films on silicon nitride via colloidal processing of flame made nanopowders (NPs)
Journal of the American Ceramic Society ( IF 3.5 ) Pub Date : 2020-11-09 , DOI: 10.1111/jace.17570
Xinyu Zhang 1 , Xiaopo Cheng 1 , Monika Jansohn 1 , Matthias Niedermaier 1, 2 , Thomas Lenk 1, 3 , Stefan Britting 4 , Karsten Schmidt 4 , Richard M. Laine 1
Affiliation  

Zirconia toughened aluminas (ZTAs) are one of the most important engineering ceramics with high melting points, excellent mechanical strength, and chemical stability, and are commonly used as wear resistant and high‐temperature components, as prosthetic implants, and electric circuit substrates. In this work, we explore methods of processing fine‐grained, dense, thin, free‐standing (ZrO2)x(Al2O3)1−x films (x = 0‐50 mol%, ~40 μm thick) by sintering flame made nanopowders (NPs) to optimize the t‐ZrO2 content, sinterability, and microstructures under select conditions (1120°C‐1500°C/5 h in O2 or 95%N2/5%H2). In all cases, the final sintered products retain t‐ZrO2 with average grain sizes (AGSs) of 0.1‐1 μm. ZTA film thicknesses were increased to ~200 μm to assess potential as electronic substrates. Excellent fracture toughness (24 MPa m1/2) and small AGSs of 0.7 μm were found for ~200 μm thick ZTA films sintered at 1500°C/5 h/N2/H2 using a three‐step binder burnout process. Furthermore, we show that homogeneous ZTA thin films (<5 μm thick) can be sintered on Si3N4 substrates (thickness ≈ 300 μm) to provide physical protection against oxidation under extreme conditions (1500°C/1 h/O2), offering additional practical utility for high‐temperature ceramics and power electronic substrates.

中文翻译:

t-ZrO2增韧了Al2O3独立膜,并通过胶体加工火焰制成的纳米粉(NP)作为氮化硅上的减缓氧化的薄膜

氧化锆增韧氧化铝(ZTA)是最重要的工程陶瓷之一,具有高熔点,出色的机械强度和化学稳定性,通常用作耐磨和高温组件,假体植入物和电路基板。在这项工作中,我们探索通过以下方法处理细粒,致密,薄,自立(ZrO 2x(Al 2 O 31- x膜(x  = 0-50 mol%,〜40μm厚)的方法。烧结火焰制成的纳米粉(NPs),以优化t- ZrO 2的含量,可烧结性和在特定条件下(在O 2中为1120°C-1500°C / 5 h)的微观结构或95%N 2 /5%H 2)。在所有情况下,最终的烧结产品保留的ZrO 2与0.1-1微米的平均粒度(AGSS)。ZTA膜厚度增加到〜200μm,以评估作为电子基板的潜力。使用三步粘结剂烧制工艺,在1500°C / 5 h / N 2 / H 2条件下烧结的厚度约为200μm的ZTA膜,具有出色的断裂韧性(24 MPa m 1/2)和0.7μm的小AGS 。此外,我们表明,均匀的ZTA薄膜(<5μm厚)可以在Si 3 N 4衬底(厚度≈300μm )上烧结,从而在极端条件(1500°C / 1 h / O)下提供物理保护,以防氧化2),为高温陶瓷和电力电子基板提供了更多的实用性。
更新日期:2020-12-30
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