Abstract The magnetoresistive properties of FexCo100-x/Cu/FexCo100-x/S three-layer films (x ≅ 0-100 at.%) with the thickness of feromagnetic dF = 15-30 nm and non-magnetic dN= 3-15 nm layers were researched. The deposited films were annealed at temperatures of 400, 550, and 700 K for 15 min. It demonstrated the presence of negative magnetoresistance for as-deposited and annealed at 400 and 550 K thin films. The maximum value of the isotropic magnetoresistance at room temperature is 3-4% for FeхСо100-x/Cu/FeхСо100-x/S (x ≅ 0-10 at.%) thermally stabilized at 550 K films with dF = 30 nm and dN = 5 nm. The heat treatment of samples at 700 K leads only to the decrease of isotropic magnetoresistance.

中文翻译：

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浓度和热处理对基于 FexС®100-x 和 Cu 的三层薄膜系统磁阻性能的影响

摘要 FexCo100-x/Cu/FexCo100-x/S 三层薄膜(x ≅ 0-100 at.%)的磁阻特性，铁磁性dF = 15-30 nm，非磁性dN = 3-15纳米层进行了研究。沉积的薄膜在 400、550 和 700 K 的温度下退火 15 分钟。它证明了在 400 和 550 K 下沉积和退火的薄膜存在负磁阻。FeхСо100-x/Cu/FeхСо100-x/S (x ≅ 0-10 at.%) 在室温下各向同性磁阻的最大值为 3-4%，在 550 K 薄膜下热稳定，dF = 30 nm 和 dN = 5 纳米。样品在 700 K 下的热处理只会导致各向同性磁阻的降低。