Abstract Lanthanum doped barium tin oxide (LBSO) film is an impressive alternative for expensive transparent conducting oxides film such as indium tin oxide. The LBSO films are grown on quartz substrate by co-sputtering a barium tin oxide ceramic target and a lanthanum metal target in Ar/O2 plasma at different substrate temperatures ranging from 500 oC to 730 oC keeping all the other parameters constant. The resulting LBSO films are all polycrystalline in nature and their thickness varies from 520-540 nm. UV-visible absorption spectra of the films show blue shift and increasing optical band gap with increasing substrate temperatures. As the substrate temperature arises up to 650 oC, the optical transparency, Hall mobility, carrier concentration and electrical conductivity of the films all increase due to improving film crystallinity, more oxygen vacancies and higher La dopant incorporation. At optimum substrate temperatures at and above 650 oC, the representative values of optical transmittance, mobility, carrier concentration, and resistivity are ~90 %, 21 cm2/V-s, 5.5 x 1019 cm-3 and 3.4 x 10-3 Ω.cm, respectively. This understanding of varying substrate temperature effect on crystal structure, morphology, electrical, and optical properties of thin film can be further utilized to explore various transparent conducting oxide applications.

中文翻译：

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衬底温度对 La 掺杂 BaSnO3 溅射多晶透明导电氧化膜结构和性能的影响

摘要 镧掺杂的氧化钡锡 (LBSO) 薄膜是昂贵的透明导电氧化物薄膜（如氧化铟锡）的一种令人印象深刻的替代品。LBSO 薄膜是通过在 Ar/O2 等离子体中在 500 oC 到 730 oC 的不同衬底温度下共溅射氧化钡锡陶瓷靶和镧金属靶而在石英衬底上生长的，同时保持所有其他参数不变。由此产生的 LBSO 薄膜本质上都是多晶的，它们的厚度在 520-540 nm 之间变化。薄膜的紫外-可见吸收光谱显示出蓝移和随着基板温度升高而增加的光学带隙。随着衬底温度升高到 650 oC，薄膜的光学透明度、霍尔迁移率、载流子浓度和电导率都因薄膜结晶度的提高而增加，更多的氧空位和更高的 La 掺杂剂掺入。在 650 oC 及以上的最佳基板温度下，光透射率、迁移率、载流子浓度和电阻率的代表值为 ~90 %，21 cm2/Vs，5.5 x 1019 cm-3 和 3.4 x 10-3 Ω.cm，分别。这种对不同衬底温度对薄膜晶体结构、形态、电学和光学特性的影响的理解可以进一步用于探索各种透明导电氧化物的应用。