Abstract Polycrystalline transparent In2O3 semiconductive ceramics are successfully fabricated by oxygen atmosphere sintering for the first time. The starting rounded In2O3 particles are obtained via pyrolyzing the nanoplate-like hydrated basic sulfate precursor prepared by a chemical precipitation route using hexamethylenetetramine as the precipitant. The silica additive dissolves into the In2O3 lattice to form an interstitial solid solution, which promotes the diffusion rate during high-temperature densification process and thus helps to achieve good optical quality for In2O3 ceramics. The created interstitial oxygen further compensates the oxygen vacancy in the ceramic body to result in a higher resistivity and lower carrier concentration / carrier mobility. The optical qualities of In2O3 ceramics are also found to have slight effects on the resistivity, carrier mobility, carrier concentration, and Hall coefficient.

中文翻译：

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二氧化硅添加剂对新型透明In2O3半导体陶瓷烧结和霍尔效应的影响

摘要 首次通过氧气氛烧结成功制备了多晶透明In2O3半导体陶瓷。通过使用六亚甲基四胺作为沉淀剂通过化学沉淀途径制备的纳米片状水合碱式硫酸盐前体热解获得起始圆形 In2O3 颗粒。二氧化硅添加剂溶解在 In2O3 晶格中形成间隙固溶体，促进高温致密化过程中的扩散速率，从而有助于实现 In2O3 陶瓷的良好光学质量。产生的间隙氧进一步补偿陶瓷体中的氧空位，从而导致更高的电阻率和更低的载流子浓度/载流子迁移率。