Abstract We are concerned in synthesizing conductive transparent oxide (CTO) films by spray pyrolysis deposition (SPD) for SnO2 (undoped) and SnO2:Sb (doped) film. The average value of the optical energy gap for CTO films of SnO2 and SnO2:Sb were found 4.01and 3.92 eV, respectively for direct transition before gamma irradiation. The optical conductivity of undoped and doped CTO film was calculated 8 × 1014 and 24 × 1014 Ω-1 cm-1, respectively. The average value of refractive index for SnO2 and SnO2:Sb films was found 1.93 and 1.67, respectively at 0.0 kGy. The average value of refractive index of annealed SnO2:Sb films was decreased from 2.07 to 1.55 after γ-irradiation (22.0 kGy). The values of real part for the thermal annealed SnO2:Sb films were found positive before and after γ-irradiation in Vis-NIR range; accordingly the thin film material is said to have an intrinsically capacitive optical response. The imaginary part values of annealed SnO2:Sb film were decreased after γ-irradiation (22.0 kGy) in Vis-NIR range but still have positive value; so the material is said to have a resistive optical response. The optimum contact angle of doped CTO films was found 30° with hydrophilic surface. This property of CTO could be applied as covers for solar cells and other devices to keep its efficiency during rains and high humidity.

中文翻译：

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SnO2:Sb 薄膜导电透明氧化物的光学表征和γ-辐照响应

摘要 我们关注通过喷雾热解沉积 (SPD) 合成 SnO2（未掺杂）和 SnO2:Sb（掺杂）薄膜的导电透明氧化物 (CTO) 薄膜。发现 SnO2 和 SnO2:Sb 的 CTO 薄膜的光学能隙平均值分别为 4.01 和 3.92 eV，用于伽马辐射之前的直接跃迁。未掺杂和掺杂的 CTO 薄膜的光导率分别计算为 8 × 1014 和 24 × 1014 Ω-1 cm-1。发现 SnO2 和 SnO2:Sb 薄膜的折射率平均值在 0.0 kGy 时分别为 1.93 和 1.67。退火后的 SnO2:Sb 薄膜的折射率平均值在 γ 辐射（22.0 kGy）后从 2.07 降低到 1.55。热退火 SnO2:Sb 薄膜的实部值在 Vis-NIR 范围内的 γ 辐照前后均为正值；因此，据说薄膜材料具有固有的电容光学响应。退火后的SnO2:Sb薄膜的虚部值在Vis-NIR范围内的γ-辐照（22.0 kGy）后降低，但仍为正值；所以据说该材料具有电阻性光学响应。发现掺杂 CTO 薄膜的最佳接触角为 30° 与亲水表面。CTO 的这种特性可以用作太阳能电池和其他设备的覆盖物，以在下雨和高湿度时保持其效率。发现掺杂 CTO 薄膜的最佳接触角为 30° 与亲水表面。CTO 的这种特性可以用作太阳能电池和其他设备的覆盖物，以在下雨和高湿度时保持其效率。发现掺杂 CTO 薄膜的最佳接触角为 30° 与亲水表面。CTO 的这种特性可用作太阳能电池和其他设备的覆盖物，以在下雨和高湿度时保持其效率。