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Control of the electrophysical properties of a semiconductor-electrolyte interface by means of directed proton transport
Applied Surface Science ( IF 6.7 ) Pub Date : 2021-02-01 , DOI: 10.1016/j.apsusc.2020.148344
V.B. Bogevolnov , A.M. Yafyasov , I.Yu. Pavlovskaya

Abstract This article offers a consistent interpretation of the dynamic behavior of a real interface in measurements. The studied interface consists of a Ge-substrate with a monolayer of dipole molecules and a wet electrode. The gradual removal of protons from the SCR during long-term cyclic polarization of the interface with the blocking potential of the dipole layer shows that hydrogen in germanium exists in the proton form. Hereupon the balance of the electron and proton concentrations in SCR determines the value of the stationary potential, and the excess of the proton concentration over the equilibrium one corresponds to the density of surface states. The inertia of the proton transfer in the SCR with respect to the transfer of electrons and holes determines the screening conditions for the potential in SCR and, therefore, the features of the dynamics of the interface parameters. The enrichment of the surface with electrons facilitates the proton dissolution in the SCR and thereby compensates for the expected increase in interface capacitance due to the increase in accumulated charge. The experimentally confirmed effect of controlled dissolution of protons in the SCR opens the perspective of a new approach to the design of charge storage devices and techniques of electrocoating.

中文翻译:

通过定向质子传输控制半导体-电解质界面的电物理特性

摘要 本文对测量中真实界面的动态行为提供了一致的解释。所研究的界面由具有单层偶极分子和湿电极的 Ge 衬底组成。在具有偶极层阻挡电位的界面的长期循环极化期间逐渐从 SCR 中去除质子表明,锗中的氢以质子形式存在。因此,SCR 中电子和质子浓度的平衡决定了固定电位的值,超过平衡点的质子浓度对应于表面态的密度。SCR 中质子转移相对于电子和空穴转移的惯性决定了 SCR 中电位的筛选条件,因此,界面参数的动态特征。表面电子的富集促进了 SCR 中的质子溶解,从而补偿了由于累积电荷增加而导致的界面电容的预期增加。实验证实的质子在 SCR 中受控溶解的效果为设计电荷存储装置和电泳涂装技术的新方法开辟了前景。
更新日期:2021-02-01
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