Phase change memory (PCM) based on chalcogenide compounds is considered to be an excellent candidate for next-generation memory because of its high speed, low energy consumption, high-density information storage, and durable stability. This has become a topic of general interest during the last two decades. Various systems have been proposed to explore more suitable compositions for PCM applications such as Ge-Te and Sb-Te binary alloys, GeTe-Sb₂Te₃ pseudo-binary alloys, and novel Te-free Sb-based alloys. In spite of this, the comprehensive performance of these pure systems still cannot fully satisfy the need for commercialization. Modification of alloys is an effective approach to enhance performance; this has been investigated significantly. Nevertheless, there are relatively few reports that directly provide integrated data on the effect of various alloying modifiers on the properties of PCM materials to obtain the relevant information conveniently, understand the role of chemical tailors on the properties of PCM materials deeply, and select modifiers matching the matrix systems efficiently. To achieve these goals and facilitate studies on PCM materials, this overview begins by summarizing and analyzing the role of alloying tailors on the performance of representative GeTe, Sb₂Te₃, Ge₂Sb₂Te₅, and Sb-based systems containing Te (Sb₂Te, Sb₃Te, Sb₄Te) and without Te (Sb-M), followed by comparing the comprehensive performance of optimized systems.

基于硫属化物化合物的相变存储器（PCM）具有高速，低能耗，高密度信息存储和持久的稳定性，因此被认为是下一代存储器的绝佳选择。在过去的二十年中，这已成为人们普遍关注的话题。已经提出了各种系统来探索更适合PCM应用的组成，例如Ge-Te和Sb-Te二元合金，GeTe-Sb ₂ Te _3。假二元合金和新型的无Te锑基合金。尽管如此，这些纯系统的综合性能仍然不能完全满足商业化的需要。合金的改性是提高性能的有效方法。这已经被大量研究。然而，很少有报道直接提供有关各种合金改性剂对PCM材料性能的影响的综合数据，以方便地获得相关信息，深入了解化学裁缝在PCM材料性能上的作用，以及选择与之匹配的改性剂。矩阵系统有效。为了实现这些目标并促进对PCM材料的研究，本概述首先总结和分析合金化裁缝在代表性GeTe，Sb性能方面的作用。_基于2 Te ₃，Ge ₂ Sb ₂ Te ₅和含Sb的系统（包含Te（Sb ₂ Te，Sb ₃ Te，Sb ₄ Te）和不含Te（Sb-M）），然后比较优化系统的综合性能。