This work reports selective high-energy heavy ions irradiation for improving the interfacial properties of epitaxial SiC-based Schottky barrier diode (SBD). Ni/4H-nSiC(0001) SBDs have been fabricated and irradiated using 200 MeV silver ions at a fluence of 1 × 10¹² ions/cm² in selective and in blanket ways under same experimental conditions. Electrical performance of the blanket way-irradiated SBD was found almost destroyed. In stark contrast, barrier height is enhanced from 1.16 eV to 1.41 eV and ideality factor reduced from 1.81 to 1.76 in selectively irradiated SBD. Moreover, interface trap/defect states density has been reduced from 1.56 × 10¹³ eV⁻¹ cm⁻² to 6.47 × 10¹² eV⁻¹ cm⁻² after selective irradiation of SBD. Role of heavy ions irradiation-induced electronic excitations in refinement of atomic-scale interfacial defects/disorders of the SBD and, hence, modification in its electrical performance has been discussed. Photoluminescence studies are also performed to get insight into the measured device performance.

这项工作报告了选择性的高能重离子辐照，以改善外延SiC基肖特基势垒二极管（SBD）的界面性能。Ni / 4H-nSiC（0001）SBD已被制造出来，并使用200 MeV银离子以1×10 ¹²离子/ cm ²的通量在相同的实验条件下以选择性和毯式方式进行辐照。毯式辐射的SBD的电性能几乎被破坏。与之形成鲜明对比的是，在选择性辐照的SBD中，势垒高度从1.16 eV提高到1.41 eV，理想因子从1.81降低到1.76。此外，界面陷阱/缺陷状态密度已从1.56×10 ¹³  eV ^-1 cm ^-2降低到6.47×10 ¹²  eV选择性照射SBD后^-1 cm ^-2。讨论了重离子辐照引起的电子激发在SBD原子级界面缺陷/无序细化中的作用，因此，对其电性能进行了讨论。还进行光致发光研究，以深入了解所测量的器件性能。