Spiking neural networks (SNNs) have attracted considerable attention as next-generation neural networks. As SNNs consist of devices that have spike-timing-dependent plasticity (STDP) characteristics, STDP is one of the critical characteristics we need to consider to implement an SNN. In this study, we generated the STDP of a biological synapse with non-volatile tunnel-field-effect-transistor (tunnel FET) memory that has a charge-storage layer and a tunnel FET structure. Tunnel FET is a promising structure to reduce the operation voltage owing to its steep sub-threshold slope. Therefore, the non-volatile tunnel-FET memory we propose enables the implementation of low-operation-voltage SNNs. This article reports the ${I-V}$ , programming, and both symmetric and asymmetric STDP characteristics of a non-volatile tunnel-FET memory with p-channel-MOS-like operation.

中文翻译：

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为大规模和低功耗尖峰神经网络生成具有非易失性隧道 FET 存储器的 STDP

尖峰神经网络（SNN）作为下一代神经网络引起了相当多的关注。由于 SNN 由具有尖峰时序相关可塑性 (STDP) 特性的设备组成，因此 STDP 是我们在实现 SNN 时需要考虑的关键特性之一。在这项研究中，我们使用具有电荷存储层和隧道 FET 结构的非易失性隧道场效应晶体管（隧道 FET）存储器生成了生物突触的 STDP。由于其陡峭的亚阈值斜率，隧道 FET 是一种很有前途的降低工作电压的结构。因此，我们提出的非易失性隧道 FET 存储器能够实现低工作电压 SNN。本文报道了 ${IV}$ ，编程，