We conducted a theoretical study on the potential use of amorphous hydrogenated silicon (a-Si:H) as the high-index material in quarter-wave-stack Bragg mirrors for cavity quantum electrodynamics applications. Compared to conventionally employed ${\rm{T}}{{\rm{a}}_2}{{\rm{O}}_5}$, a-Si:H provides a much higher-index contrast with ${\rm{Si}}{{\rm{O}}_2}$, thus promising significantly reduced layer-number requirements and a smaller mode volume. Silicon-based mirrors offer the additional advantage of providing a wide omnidirectional reflection band, which allows greater control of the background electromagnetic modes. From numerical studies at 850 nm, we show that a-Si:H-based mirrors could enable significant improvements with respect to maximum Purcell factor, cooperativity, and spontaneous emission coupling factor, in addition to their potential to reduce fabrication complexity. These advantages are anticipated to be even more compelling at longer wavelengths.

中文翻译：

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用于腔QED应用的硅基布拉格反射镜的理论研究

我们进行了有关非晶氢化硅（a-Si：H）作为腔波导量子电动力学应用的四分之一波堆叠布拉格反射镜中高​​折射率材料的潜在用途的理论研究。与常规使用的$ {\ rm {T}} {{\ rm {a}} _ 2} {{\ rm {O}} _ 5} $相比，a-Si：H与$ {\ rm {Si}} {{\ rm {O}} _ 2} $，从而有望显着减少层数要求并减小模式体积。基于硅的反射镜具有提供宽全向反射带的其他优点，从而可以更好地控制背景电磁模式。通过在850 nm处的数值研究，我们表明，基于a-Si：H的反射镜除了具有降低制造复杂性的潜力外，还可以在最大Purcell因子，协同性和自发发射耦合因子方面实现显着改善。预期这些优点在更长的波长下将更具吸引力。