Abstract The micro/nano surface structure of triboelectric layers possesses a critical impact on the performance of triboelectric nanogenerators (TENG). Here, we present a solution for the enhancement of the triboelectric performance by utilizing a Q-switched Pulsed Laser (QSL) that directly writes on an Aluminum surface in the net configuration. The crinkled nanostructure of the surface of Polytetrafluoroethylene (PTFE) is fabricated by the Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) technology. By adjusting the QSL source parameters, many kinds of Al/PTFE concepts of synthetic devices with built-in contact-separation could systematically be characterized. The optimal triboelectric performance was confirmed by the increase of the open-circuit voltage and the short-circuit current from 75 V to 148 V and from 6.8 μA to 9.6 μA, respectively, and by a nearly 2.5 times higher power than that of a pristine Al-based device. The real-time practical applicability of the SA-TENG concept was confirmed by the lighting up of 92 LEDs connected in series and by the charging up of a 10 μF capacitor to 1.68 V in 30 s. This work provides an effective direct writing process with a Q-switched Pulsed Laser for the fabrication of micro/nano-structures on Aluminum and for the enhancement of the output performance of TENG, which would greatly promote the TENG branding in mass manufacturing and micro-energy utilizations.

中文翻译：

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基于调Q脉冲激光直写的Al薄膜微纳米表面结构增强摩擦电性能研究

摘要 摩擦电层的微/纳米表面结构对摩擦电纳米发电机（TENG）的性能具有关键影响。在这里，我们提出了一种通过利用 Q 开关脉冲激光器 (QSL) 来增强摩擦电性能的解决方案，该激光器直接在铝表面上写入网络配置。聚四氟乙烯 (PTFE) 表面的褶皱纳米结构是通过电感耦合等离子体反应离子蚀刻 (ICP-RIE) 技术制造的。通过调整 QSL 源参数，可以系统地表征具有内置接触分离的合成装置的多种 Al/PTFE 概念。最佳摩擦电性能通过开路电压和短路电流从 75 V 增加到 148 V 和从 6.8 μA 增加到 9.6 μA 得到证实，功率分别是原始铝基器件的近 2.5 倍。SA-TENG 概念的实时实用性通过点亮 92 个串联 LED 以及在 30 秒内将 10 μF 电容器充电至 1.68 V 得到证实。这项工作为在铝上制造微/纳米结构和提高 TENG 的输出性能提供了一种有效的 Q 开关脉冲激光器直写工艺，这将极大地促进 TENG 品牌在大规模制造和微能源利用。