Abstract CZTS precursors was deposit by sputtering, and then annealed in the range of 1000–5000 Pa sulfur partial pressure. The partial pressure of sulfur is controlled by changing the amounts of sublimed sulfur in a small, sealed quartz tube. As the sulfur partial pressure increased, the crystallinity of CZTS thin film was improved; surface voids and secondary phases were reduced; the thickness of MoS2 at low sulfur partial pressure ranging from 1000 Pa3000 Pa. After the sulfur partial pressure reaching 5000 Pa, the thickness of MoS2 increased significantly. The secondary phases, voids and MoS2 reduced the carrier collection in the 500–800 nm wavelength range, resulting in lower short-circuit current density and fill factor. Finally, the device based on the 3000 Pa sulfur partial pressure achieved the highest photoelectric conversion efficiency of 4.25% (VOC: 0.648 V, ISC: 15.25 mA/cm2, FF: 43.02%).

中文翻译：

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硫分压对Cu2ZnSnS4太阳能电池结构性能的影响

摘要 CZTS 前驱体通过溅射沉积，然后在 1000-5000 Pa 硫分压范围内退火。通过改变小型密封石英管中升华的硫的量来控制硫的分压。随着硫分压的增加，CZTS薄膜的结晶度提高；减少了表面空隙和第二相；MoS2 在低硫分压下的厚度为 1000 Pa3000 Pa。硫分压达到 5000 Pa 后，MoS2 的厚度显着增加。第二相、空隙和二硫化钼减少了 500-800 nm 波长范围内的载流子收集，导致短路电流密度和填充因子降低。最后，