Abstract While the importance of α-Ga2O3 crystals is increasingly gaining much interest, the structural behavior of halide vapor phase epitaxy (HVPE) α-Ga2O3 crystals in wet chemical etching has not been explored yet. In this study, we investigate the structural characterization of HVPE α-Ga2O3 materials via alkali KOH solution etching. Further, the activation energy of the etch rate for the materials, etch pit, and surface roughness after wet chemical treatment have been examined. The cross-sectional TEM analysis demonstrates that the triangular-shaped etch pits with (11 2 ‾ 6) plane are caused by the propagation of threading dislocations in the HVPE α-Ga2O3 crystals.

中文翻译：

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卤化物气相外延在蓝宝石上生长的α-Ga2O3薄膜的结构特征

摘要 虽然 α-Ga2O3 晶体的重要性越来越受到人们的关注，但卤化物气相外延 (HVPE) α-Ga2O3 晶体在湿化学蚀刻中的结构行为尚未得到探索。在这项研究中，我们通过碱 KOH 溶液蚀刻研究了 HVPE α-Ga2O3 材料的结构特征。此外，还研究了湿法化学处理后材料的蚀刻速率的活化能、蚀刻坑和表面粗糙度。横截面 TEM 分析表明，具有 (11 2 ‾ 6) 面的三角形蚀刻坑是由 HVPE α-Ga2O3 晶体中螺纹位错的传播引起的。