In this article detailed electro-analytical comparison of the commercial mono-crystalline silicon and passivated emitter and rear contact (PERC) solar cells has been presented that can help in device optimization during manufacturing process. This study indicates fundamental differences between these two technologies in terms of the series resistance, shunt resistance and junction quality including ideality factor and doping concentration. Impedance spectroscopic analysis revealed a value of series resistance of 1 Ω for both the devices with no substantial difference, which suggest that employed metal contacts and base layer conductivity in both the solar cells have comparable electrical characteristics. The shunt resistance of 190 Ω cm² and 98 Ω cm² have been obtained for PERC and reference solar cells. The ideality factors of 1.9 and 2.2 have been obtained for PERC and reference solar cells, which indicate a better junction quality in PERC solar cells. From Mott-Schottky analysis a value of 0.65 V built-in potential has been obtained for both the solar cells. A doping density of 2.31נ10¹⁶ cm⁻³ and 4.494נ10¹⁶ cm⁻³ has been obtained for reference and PERC solar cells. This study intends to provide a basis for development of better optimization strategies to improve the performance of solar cells.

在本文中，已经对商用单晶硅与钝化的发射极和后接触（PERC）太阳能电池进行了详细的电分析比较，这些有助于在制造过程中优化器件。这项研究表明，这两种技术在串联电阻，分流电阻和结质量（包括理想因子和掺杂浓度）方面存在根本差异。阻抗谱分析显示，两个器件的串联电阻值为1，没有实质性差异，这表明两个太阳能电池中使用的金属触点和基层电导率具有可比的电特性。分流电阻为190Ωcm ²和98Ωcm ²已经获得了PERC和参考太阳能电池。对于PERC和参考太阳能电池，已经获得了1.9和2.2的理想因子，这表明PERC太阳能电池具有更好的结质量。根据Mott-Schottky分析，两个太阳能电池的内置电位均为0.65V。的2.31נ10的掺杂密度¹⁶厘米^-3和4.494נ10 ¹⁶厘米^-3已经获得参考和PERC太阳能电池。这项研究旨在为开发更好的优化策略以改善太阳能电池的性能提供基础。