Chemically amplified resists have been used in the state-of-the-art extreme ultraviolet (EUV) lithography. A basic additive has been added to the resist formula as a quencher to control acid diffusion. In this study, the effects of photodecomposable quencher (PDQ) concentration on the chemical gradient (an indicator of line edge roughness) in chemically amplified EUV resist processes were investigated. The chemical gradient was calculated on the basis of the sensitization and reaction mechanisms for different half-pitches, sensitivities, photoacid generator (PAG) concentrations, PDQ concentrations, and effective reaction radii for deprotection. The obtained 130 000 data were analyzed by least squares, lasso, ridge, and elastic net regressions. Regarding the contribution to the chemical gradient, PDQ concentration was apparently symmetric to PAG concentration. Optimum PDQ concentrations were well predicted (accuracy of approximately 10%) within the examined variable ranges even with 495 training data using the fitted parameters obtained by lasso, ridge, and elastic net regressions.

化学放大的抗蚀剂已用于最新的极紫外（EUV）光刻中。已将一种碱性添加剂作为淬灭剂添加到抗蚀剂配方中，以控制酸的扩散。在这项研究中，研究了光可分解淬灭剂（PDQ）浓度对化学放大EUV抗蚀剂工艺中化学梯度（线边缘粗糙度的指标）的影响。根据不同半间距，感光度，光酸产生剂（PAG）浓度，PDQ浓度和脱保护的有效反应半径的敏化和反应机理计算化学梯度。通过最小二乘，套索，岭和弹性净回归分析获得的13万个数据。关于化学梯度的贡献，PDQ浓度显然与PAG浓度对称。使用套索，山脊和弹性网回归获得的拟合参数，即使使用495个训练数据，也可以很好地预测在检查的变量范围内的最佳PDQ浓度（准确度约为10％）。