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External magnetic field guiding in HiPIMS to control sp3 fraction of tetrahedral amorphous carbon films
Journal of Physics D: Applied Physics ( IF 3.1 ) Pub Date : 2020-11-05 , DOI: 10.1088/1361-6463/abb9d2
Behnam Akhavan 1, 2, 3 , Rajesh Ganesan 2, 4 , Stephen Bathgate 2 , Dougal G McCulloch 5 , James G Partridge 5 , Mihail Ionsecu 6 , Dave T A Mathews 7 , Michael Stueber 8 , Sven Ulrich 8 , David R McKenzie 2, 3, 9 , Marcela MM Bilek 1, 2, 3, 9
Affiliation  

Amorphous carbon films have many applications that require control over their sp3 fraction to customise the electrical, optical and mechanical properties. Examples of these applications include coatings for machine parts, biomedical and microelectromechanical devices. In this work, we demonstrate the use of a magnetic field with a high-power impulse magnetron sputtering (HiPIMS) source as a simple, new approach to give control over the sp3 fraction. We provide evidence that this strategy enhances the deposition rate by focusing the flux, giving films with high tetrahedral bonding at the centre of the deposition field and lower sp3 fractions further from the centre. Resistive switching appears in films with intermediate sp3 fractions. The production of thin amorphous carbon films with selected properties without the need for electrical bias opens up applications where insulating substrates are required. For example, deposition of sp3 rich films on polymers for wear resistant coatings as well as fabrication of resistive switching devices for neuromorphic technologies that require tuning of the sp3 fraction on insulating substrates are now possible.



中文翻译:

HiPIMS中的外部磁场引导可控制四面体无定形碳膜的sp 3分数

非晶碳膜有许多应用,需要对其sp 3分数进行控制以定制电,光学和机械性能。这些应用的示例包括用于机械零件,生物医学和微机电设备的涂层。在这项工作中,我们演示了将磁场与高功率脉冲磁控溅射(HiPIMS)源一起使用,作为一种简单的新方法来控制sp 3分数。我们提供的证据表明,该策略可通过集中通量来提高沉积速率,从而在沉积场的中心产生具有高四面体键合的膜,而离中心较远的sp 3分数较低。电阻开关出现在中间sp 3的薄膜中分数。具有选定特性的无定形碳薄膜的生产无需电偏压,从而开辟了需要绝缘基板的应用。例如,现在可以在聚合物上沉积富含sp 3的薄膜,以用于耐磨涂层,以及制造用于神经形态技术的电阻转换装置,这些装置需要调整绝缘基板上的sp 3分数。

更新日期:2020-11-05
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