This work provides a new simultaneous noise and impedance matching (SNIM) methodology for designing a 3–5 GHz ultrawideband low-noise amplifier (LNA) in 0.18 μm complementary metal–oxide–semiconductor (CMOS) process using the advanced design system platform. To justify the proposed method, common gate (CG)- and common source (CS)-input-matched LNAs are designed where the variation of input impedance over the whole operating band is significantly reduced by applying the multifinger layout technique and employing shunt passive elements for the input device without degenerating the structure, respectively. As part of the proposed SNIM method, a two-dimensional contour plot-based process variation tolerant bias voltage set up protocol is developed which can optimise forward gain ( S ₂₁ ), noise figure (NF) and stability factor simultaneously. The regulation of amplifier port parameters with bias settling contour plots and finger parameters results in the proposed SNIM technique. For the CG-input-matched LNA, the post-layout electromagnetic simulated NF is between 3.08 and 4.1 dB, the average power gain of 25.52 dB with a power consumption of 20.19 mW and the CS-input-matched LNA achieves an NF in between 2.772 and 3.04 dB, the average power gain of 17.98 dB while the dissipated power is 20.73 mW.

中文翻译：

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3-5 GHz多指CMOS LNA，采用同时噪声和阻抗匹配技术，可显着降低金属-氧化物-半导体场效应晶体管的宽带阻抗变化

这项工作提供了一种新的同步噪声和阻抗匹配（SNIM）方法，用于使用先进的设计系统平台以0.18μm互补金属-氧化物-半导体（CMOS）工艺设计3-5 GHz超宽带低噪声放大器（LNA）。为了证明该方法的合理性，设计了共栅极（CG）和共源（CS）输入匹配的LNA，其中通过应用多指布局技术和采用并联无源元件，可以显着减小整个工作频段上的输入阻抗变化。在不使结构退化的情况下分别用于输入设备。作为建议的SNIM方法的一部分，开发了一种基于二维轮廓图的过程容差偏置电压设置协议，该协议可以优化正向增益（ 小号 ₂₁ ），噪声系数（NF）和稳定因子同时出现。利用偏置稳定轮廓图和指状参数来调节放大器端口参数导致了所提出的SNIM技术。对于CG输入匹配的LNA，布局后的电磁模拟NF在3.08至4.1 dB之间，平均功率增益为25.52 dB，功耗为20.19 mW，而CS输入匹配的LNA则在NF之间2.772和3.04 dB，平均功率增益为17.98 dB，而耗散功率为20.73 mW。