In this study, a 60   nm gate length double-gate AlGaN/GaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed and different electrical characteristics, such as DC, small-signal, radio-frequency (RF) and high-frequency noise performances of the devices are characterised through TCAD device simulations. The results of double-gate MOS-HEMT are compared with the TCAD simulation results as well as with available experimental data of single-gate AlGaN/GaN MOS-HEMT having a similar gate length available from the literature. It is observed that the double-gate AlGaN/GaN/AlGaN MOS-HEMT shows good sub-threshold slope, improved ON current, short-channel effect immunity, improved RF and noise performance. A look-up table-based Verilog-A model is developed for both devices and the models are incorporated into the Cadence EDA tool to utilise the proposed device in circuit simulations. The Verilog-A model is applied to design a 1–20   GHz wideband feedback cascode low-noise amplifier (LNA). Performance variability of LNA due to single- and double-gate MOS-HEMT is also investigated.

中文翻译：

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用于低噪声放大器设计的基于单栅和双栅的AlGaN / GaN MOS-HEMT：对比研究

在这项研究中，   提出了纳米栅极长度为双栅极的AlGaN / GaN / AlGaN金属氧化物半导体高电子迁移率晶体管（MOS-HEMT），并提出了不同的电气特性，例如DC，小信号，射频（RF）和高通过TCAD设备仿真来表征设备的高频噪声性能。将双栅MOS-HEMT的结果与TCAD仿真结果以及具有与文献中相似的栅长的单栅AlGaN / GaN MOS-HEMT的可用实验数据进行了比较。观察到，双栅AlGaN / GaN / AlGaN MOS-HEMT表现出良好的亚阈值斜率，改善的导通电流，短沟道效应抗扰性，改善的RF和噪声性能。为这两种设备开发了基于查询表的Verilog-A模型，并将该模型合并到Cadence EDA工具中，以在电路仿真中利用建议的设备。Verilog-A模型用于设计1–20   GHz宽带反馈共源共栅低噪声放大器（LNA）。还研究了由于单栅极和双栅极MOS-HEMT而引起的LNA性能变化。