In recent past, the cross-coupling crosstalk becomes a dominating factor due to the closer proximity of wire that reduces the performance of coupled interconnects at lower technology. To overwhelm interconnect problems, this work demonstrates a comprehensive study of unshielded and active shielded spatially arranged mixed carbon nanotube (CNT) bundle (SMCB) and randomly distributed mixed CNT bundle (RMCB) interconnects at 10 nm technology. Using a driver-interconnect-load setup, a unique multi-conductor transmission line and an equivalent single conductor model is proposed considering the impact of different CNT diameters with their associated line and coupling parasitics. A resistive and CNT field-effect transistor (CNTFET) driver model is considered at 10 nm technology to demonstrate the impact of single line delay, cross-coupling delay, and power dissipation for the densely packed bundle at global lengths. It is observed that a CNTFET-based realistic RMCB exhibits on an average 29.19 and 39.56% reduced single line delay and power dissipation, respectively compared to different SMCB configurations at 700 µm interconnect lengths. Moreover, a shielded RMCB encouragingly provides an improved immunity of cross-coupling impact for the on-chip interconnects at 10 nm technology. Therefore, from fabrication and modelling aspects, a randomly distributed MCB can be proved as emerging interconnect for next-generation on-chip applications.

中文翻译：

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混合CNT束互连在10 nm技术下的性能分析

在最近的过去，由于导线的距离越近，交叉耦合串扰成为一个主要因素，从而降低了采用较低技术的耦合互连的性能。为了解决互连问题，这项工作展示了对10纳米技术下的非屏蔽和有源屏蔽空间排列的混合碳纳米管（SMC）束和随机分布的混合CNT束（RMCB）互连的全面研究。考虑到不同CNT直径及其相关线路和耦合寄生的影响，使用驱动器互连负载设置，提出了一条独特的多导体传输线和等效的单导体模型。电阻和CNT场效应晶体管（CNTFET）驱动器模型在10 nm技术下被考虑，以证明单线延迟，交叉耦合延迟，以及在全球范围内密集包装的束的功耗。可以观察到，与在700 µm互连长度上的不同SMCB配置相比，基于CNTFET的实际RMCB分别平均降低了29.19和39.56％的单线延迟和功耗。此外，屏蔽RMCB令人鼓舞地为10 nm技术的片上互连提供了更好的抗交叉耦合影响的能力。因此，从制造和建模方面来看，随机分布的MCB可以证明是下一代片上应用的新兴互连。分别与互连长度为700 µm的不同SMCB配置进行了比较。此外，屏蔽RMCB令人鼓舞地为10 nm技术的片上互连提供了更好的抗交叉耦合影响的能力。因此，从制造和建模方面来看，随机分布的MCB可以证明是下一代片上应用的新兴互连。分别与互连长度为700 µm的不同SMCB配置进行了比较。此外，屏蔽RMCB令人鼓舞地为10 nm技术的片上互连提供了更好的抗交叉耦合影响的能力。因此，从制造和建模方面来看，随机分布的MCB可以证明是下一代片上应用的新兴互连。