In this work, the authors demonstrate the realisation of metal controlled (MC) dopingless (DL) metal oxide semiconductor field-effect transistor (MOSFET) on a selective buried oxide (SELBOX). The different doped regions of the proposed device, such as source/drain and metal partial ground plane, have been realised with different metal work functions and the device is being named as MC-DL-SELBOX-MOSFET. A 2D simulation studies have shown MC-DL-SELBOX-MOSFET can outperform the conventionally doped SELBOX-MOSFET (D-SELBOX-MOSFET) in terms of short channel performance comparison. The severity of short channel effects is significantly less in MC-DL-SELBOX-MOSFET than D-SELBOX-MOSFET and most importantly the proposed device can be scaled below 10 nm without degrading the performance. Further, the ac analysis has shown that transconductance and cut-off frequency of the MC-DL-SELBOX-MOSFET are higher than D-SELBOX-MOSFET. Besides this, MC-DL-SELBOX-MOSFET is unhampered from the doping-related complications and can be processed at low temperatures.

中文翻译：

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选择性/部分掩埋氧化物上的金属控制纳米级无掺杂MOSFET

在这项工作中，作者演示了在选择性掩埋氧化物（SELBOX）上实现金属控制（MC）无掺杂（DL）金属氧化物半导体场效应晶体管（MOSFET）的实现。所提出的器件的不同掺杂区域，例如源极/漏极和金属局部接地层，已经通过不同的金属功函数实现，该器件被命名为MC-DL-SELBOX-MOSFET。二维仿真研究表明，就短通道性能比较而言，MC-DL-SELBOX-MOSFET可以优于传统掺杂的SELBOX-MOSFET（D-SELBOX-MOSFET）。在MC-DL-SELBOX-MOSFET中，短沟道效应的严重性明显小于在D-SELBOX-MOSFET中，最重要的是，所提出的器件可以缩放至10 nm以下而不会降低性能。进一步，交流分析表明，MC-DL-SELBOX-MOSFET的跨导和截止频率高于D-SELBOX-MOSFET。除此之外，MC-DL-SELBOX-MOSFET不受掺杂相关并发症的影响，可以在低温下进行处理。