当前位置: X-MOL 学术IET Circuits, Devices Syst. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Floating memristor and inverse memristor emulation configurations with electronic/resistance controllability
IET Circuits, Devices & Systems ( IF 1.0 ) Pub Date : 2020-11-03 , DOI: 10.1049/iet-cds.2020.0106
Kapil Bhardwaj 1 , Mayank Srivastava 1
Affiliation  

This study presents two configurations to realise the behaviour of a floating memristor and an inverse memristor. The modified version of VDCC (voltage differencing current conveyor) termed as MVDCC (modified VDCC) is used to develop the presented emulators. The floating memristor emulator uses a single MVDCC and two grounded passive elements while the configuration of floating inverse memristor emulator is based on two MVDCCs, two grounded resistances and single grounded capacitance. The behaviour of both the circuits can be controlled through applied bias voltage as well as the employed grounded resistances. Both the presented circuits do not employ any external analogue multiplier circuit/IC, which can be considered as the most notable feature of these circuits. This study also describes the mathematical properties of memristor and inverse memristor taking both symmetrical and non-symmetrical models into account. PSPICE simulation tool is used to verify the working of realised emulation circuits using 0.18 μm CMOS process technology. The implementations of realised emulators, employing commercial ICs like AD844, CA3080 and LM13700, have also been presented and validated.

中文翻译:

具有电子/电阻可控性的浮动忆阻器和反忆阻器仿真配置

这项研究提出了两种配置来实现浮动忆阻器和反向忆阻器的行为。VDCC(电压差电流传送器)的修改版本称为MVDCC(修改后的VDCC)用于开发本仿真器。浮动忆阻器仿真器使用单个MVDCC和两个接地的无源元件,而浮动反相忆阻器仿真器的配置基于两个MVDCC,两个接地电阻和单个接地电容。可以通过施加偏置电压以及采用的接地电阻来控制两个电路的行为。所提供的两个电路均未使用任何外部模拟乘法器电路/ IC,可以将其视为这些电路的最显着特征。这项研究还描述了忆阻器和反忆阻器的数学特性,同时考虑了对称和非对称模型。PSPICE仿真工具用于验证采用0.18μmCMOS工艺技术的已实现仿真电路的工作情况。还介绍并验证了采用商用IC(如AD844,CA3080和LM13700)的仿真器的实现。
更新日期:2020-11-06
down
wechat
bug