One selector-one resistor (1S-1R) configuration is desirable to use in conductive bridge resistive random-access memory (CBRAM) and resistive random-access memory (RRAM) crossbar arrays (CBAs) to reduce sneak path current. In this study, an analytical model of Ta2O5/TaOx/TiO2 selector device is developed and is integrated with RRAM model to demonstrate the acquired features of 1S-1R to reduce the sneak path current. The proposed selector model is developed by considering the electric field-driven tunnelling mechanisms co-exist in thin multi-layer devices such as direct and Fowler-Nordheim tunnelling. The simulated characteristics of proposed model shows high non-linearity (∼1600), high selectivity (∼10 ⁴ ), high current density (∼10 ⁷ A/cm ² ) and low off current (∼46 nA). Further, the proposed model is simulated with different top electrode metals and dielectric materials to demonstrate the formation of optimal stack for the desired application. Then, the proposed selector model (1S) is integrated with RRAM model (1R) and the compatibility of the devices is verified. Moreover, from the presented 1S-1R model, various parameters for the establishment of CBA such as read/write voltages for selected/unselected trails are predicted and substantial conditions for sneak path current reduction such as non-linearity, Roff/Ron ratio and off-current (10 nA) are also evaluated.

中文翻译：

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基于钽/氧化钛的多层选择器的分析模型，可消除RRAM阵列中的潜行电流

希望在导电桥电阻式随机存取存储器（CBRAM）和电阻式随机存取存储器（RRAM）交叉开关阵列（CBA）中使用一种选择器一电阻（1S-1R）配置，以减少潜行电流。在这项研究中，开发了Ta2O5 / TaOx / TiO2选择器装置的分析模型，并将其与RRAM模型集成以演示1S-1R的获得特性以减少潜行电流。提出的选择器模型是通过考虑在薄的多层设备（例如直接和Fowler-Nordheim隧穿）中并存的电场驱动隧穿机制而开发的。所提出模型的仿真特性显示出高非线性度（〜1600），高选择性（〜10 ⁴ ），高电流密度（〜10 ⁷ A / cm ² ）和低关断电流（〜46 nA）。此外，使用不同的顶部电极金属和介电材料对提出的模型进行了仿真，以证明针对所需应用形成了最佳堆叠。然后，将建议的选择器模型（1S）与RRAM模型（1R）集成在一起，并验证了设备的兼容性。此外，从提出的1S-1R模型中，可以预测用于建立CBA的各种参数，例如对选定/未选定路径的读/写电压，并且可以减小潜行电流的实质条件，例如非线性，Roff / Ron比和off还评估了-电流（10 nA）。