A proof-of-concept demonstration of on-wafer electronic calibration in the submillimeter-wave band (325–500 GHz) is presented. A GaAs Schottky diode shunting a coplanar transmission line is employed as an electronic standard that is tuned by bias applied through wafer probes. Error-corrected scattering parameter measurements, based on a Thru-Reflect-Line (TRL) calibration, are used to characterize the on-wafer diode and establish it as a standard for electronic calibration. Subsequently, ensembles of measurements from a multiline TRL calibration and the diode calibration standard are performed and compared to assess the uncertainty associated with the two approaches. It is found that the error coefficients estimated using the electronic standard are in good agreement with those found from the multiline TRL calibration. Moreover, the electronic standard exhibits a significant improvement in precision compared with the TRL standards, consistent with previous work showing that error in probe placement between measurements was a principle source of uncertainty for TRL-based calibration.

中文翻译：

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使用肖特基二极管进行亚毫米波晶圆上散射参数测量的电子校准

介绍了亚毫米波段 (325–500 GHz) 中晶圆上电子校准的概念验证演示。将共面传输线分流的 GaAs 肖特基二极管用作电子标准，通过晶片探针施加的偏压进行调谐。基于直通反射线 (TRL) 校准的误差校正散射参数测量用于表征晶圆上二极管并将其确立为电子校准的标准。随后，执行并比较来自多线 TRL 校准和二极管校准标准的测量集合，以评估与两种方法相关的不确定性。发现使用电子标准估计的误差系数与从多线 TRL 校准中发现的误差系数非常一致。而且，