2D materials have recently demonstrated a strong potential for spintronic applications. This has been further reinforced by the discovery of ferromagnetic 2D layers. Nevertheless, the fragility of many 2D magnetic materials to ambient conditions has so far hindered their faster characterization and integration into devices. We report here on a simple large-scale method that allows to stabilize strongly air sensitive materials, such as CrBr₃, down to the monolayer limit with ultrathin barriers grown by atomic layer deposition (ALD). We focus on MgO as a passivation layer to additionally serve as tunnel spin injection barrier for spintronic applications. We develop a special removable combined protection–encapsulation stack to better preserve 2D material and MgO barrier qualities during device fabrication. This scheme allows to observe 2D ferromagnet stability over one year of air exposure and to demonstrate CrBr₃ successful integration into vertical devices. Overall, these results highlight an efficient way to handle these materials in ambient conditions, unlocking possibilities to fasten their advanced characterization and ease their integration into devices.

中文翻译：

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2D磁体可长期稳定到单层器件集成

2D材料最近展示了自旋电子应用的强大潜力。铁磁二维层的发现进一步加强了这一点。然而，迄今为止，许多2D磁性材料在环境条件下的脆弱性阻碍了它们的快速表征和集成到设备中。我们在这里报告了一种简单的大规模方法，该方法可以稳定对空气敏感的材料，例如CrBr ₃，直到通过原子层沉积（ALD）生长的超薄势垒达到单层极限。我们专注于MgO作为钝化层，另外还用作自旋电子学应用的隧道自旋注入势垒。我们开发了一种特殊的可移动组合保护封装封装，以在器件制造过程中更好地保​​留2D材料和MgO阻挡层的质量。该方案可以观察到在暴露于空气的一年中的二维铁磁体的稳定性，并证明CrBr ₃成功集成到垂直设备中。总体而言，这些结果突显了一种在环境条件下处理这些材料的有效方法，为增强其高级特性并简化其与器件的集成提供了可能性。