当前位置：
X-MOL 学术
›
Chem. Asian J.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Defect Compensation Weakening Induced Mobility Enhancement in Thermoelectric BiTeI by Iodine Deficiency
Chemistry - An Asian Journal ( IF 3.5 ) Pub Date : 2020-11-05 , DOI: 10.1002/asia.202001164 Zhou Li 1 , Chenxi Zhao 1 , Chong Xiao 1, 2
Chemistry - An Asian Journal ( IF 3.5 ) Pub Date : 2020-11-05 , DOI: 10.1002/asia.202001164 Zhou Li 1 , Chenxi Zhao 1 , Chong Xiao 1, 2
Affiliation
|
Carrier mobility (weighted mobility more specifically) of thermoelectrics fundamentally determines its power factor, representing a new cut‐in point to optimize the thermoelectric performance. However, researches on enhancing the carrier mobility to improve power factor has been overlooked. In present work, we highlight a significant mobility enhancement in BiTeI by introducing I deficiency, which improves the power factor and final ZT value. A defect compensation weakening mechanism is adopted that the induced I vacancies reduce the concentration of intrinsic 
and 
antisite defects, which weakens the donor‐acceptor defect compensation and suppresses the defects‐induced carrier scattering. As a result, the carrier mobility is obviously enhanced in I‐deficient samples, which ensures an effectively improved power factor and final ZT. A maximum ZT of 0.57 is achieved at 570 K perpendicular to the pressing direction, which is superior to pristine BiTeI and among the highest values reported for bulk BiTeI‐based thermoelectric materials. Present work opens up a new avenue for thermoelectric optimization mainly by mobility enhancement.
中文翻译：
碘缺乏导致缺陷补偿减弱导致热电BiTeI迁移性增强
热电的载流子迁移率（更具体地说是加权迁移率）从根本上决定其功率因数，代表了优化热电性能的新切入点。但是，关于提高载流子迁移率以提高功率因数的研究被忽视了。在当前的工作中，我们通过引入I缺陷强调了BiTeI的显着迁移率提高，这改善了功率因数和最终ZT值。采用缺陷补偿削弱机制，诱导的I空位降低了本征和空位的浓度。
反位缺陷，削弱了供体-受体的缺陷补偿并抑制了由缺陷引起的载流子散射。结果，I缺陷样本中的载流子迁移率明显提高，从而确保有效地改善了功率因数和最终ZT。在垂直于压制方向的570 K处，最大ZT为0.57，这优于原始的BiTeI，并且是基于BiTeI的块状热电材料的最高报告值。目前的工作主要通过提高迁移率为热电优化开辟了一条新途径。
更新日期：2020-12-01
and
antisite defects, which weakens the donor‐acceptor defect compensation and suppresses the defects‐induced carrier scattering. As a result, the carrier mobility is obviously enhanced in I‐deficient samples, which ensures an effectively improved power factor and final ZT. A maximum ZT of 0.57 is achieved at 570 K perpendicular to the pressing direction, which is superior to pristine BiTeI and among the highest values reported for bulk BiTeI‐based thermoelectric materials. Present work opens up a new avenue for thermoelectric optimization mainly by mobility enhancement.
中文翻译：
碘缺乏导致缺陷补偿减弱导致热电BiTeI迁移性增强
热电的载流子迁移率（更具体地说是加权迁移率）从根本上决定其功率因数，代表了优化热电性能的新切入点。但是，关于提高载流子迁移率以提高功率因数的研究被忽视了。在当前的工作中，我们通过引入I缺陷强调了BiTeI的显着迁移率提高，这改善了功率因数和最终ZT值。采用缺陷补偿削弱机制，诱导的I空位降低了本征
和空位的浓度。
反位缺陷，削弱了供体-受体的缺陷补偿并抑制了由缺陷引起的载流子散射。结果，I缺陷样本中的载流子迁移率明显提高，从而确保有效地改善了功率因数和最终ZT。在垂直于压制方向的570 K处，最大ZT为0.57，这优于原始的BiTeI，并且是基于BiTeI的块状热电材料的最高报告值。目前的工作主要通过提高迁移率为热电优化开辟了一条新途径。
京公网安备 11010802027423号