Abstract The proposed research aims to discover the anti-biofilm activity of pure Zinc Oxide and Indium doped Zinc Oxide (In-ZnO) thin films by varying doping concentration of Indium. Thin films of ZnO and In doped Zinc Oxide was successfully synthesized by resistive thermal vacuum deposition technique. Physical property, like the crystallinity and orientation of the deposited thin films, was examined by XRD analysis. Scanning electron microscopy of ZnO and In-ZnO thin film reveals morphological characteristics. Whereas, HRTEM confirmed the polycrystalline nature of thin films while EDX confirmed element composition. AFM shows that the roughness of thin films increase as doping concentration of In increase in ZnO. An improved result of anti-biofilm activity was examined on Indium doped zinc oxide (In-ZnO) thin-film under an optical microscope against Escherichia coli and Staphylococcus aureus.

中文翻译：

---

铟掺杂对氧化锌薄膜对大肠杆菌和金黄色葡萄球菌的抗生物膜活性的影响

摘要 本研究旨在通过改变铟的掺杂浓度来发现纯氧化锌和掺铟氧化锌 (In-ZnO) 薄膜的抗生物膜活性。采用电阻热真空沉积技术成功合成了ZnO和In掺杂氧化锌薄膜。通过XRD分析检查物理性质，如沉积薄膜的结晶度和取向。ZnO 和 In-ZnO 薄膜的扫描电子显微镜揭示了形态特征。而 HRTEM 证实了薄膜的多晶性质，而 EDX 证实了元素组成。AFM 显示薄膜的粗糙度随着 ZnO 中 In 掺杂浓度的增加而增加。