Abstract The positron characteristics such as chemical potential, affinity, effective mass and diffusion constant in AlSb indirect band-gap semiconductor are investigated at zero pressure and under compression. The calculations are mainly performed in the framework of a pseudopotential approach. We follow the evolution of all features of interest as a function of pressure. Our results show that upon compression, the positron becomes thermalized in a time longer than that at zero pressure. Moreover, its affinity decreases with raising pressure indicating that it annihilates differently from zero pressure. A close inspection of the positron diffusion constant suggests that the positron diffuses better under applied pressure. The present contribution can be a useful support for studying positron annihilation in indirect band gap semiconducting materials.

中文翻译：

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压缩条件下AlSb晶体化合物中的正电子化学势和扩散常数

摘要 研究了AlSb 间接带隙半导体在零压力和压缩下的化学势、亲和力、有效质量和扩散常数等正电子特性。计算主要在赝势方法的框架内进行。我们跟踪所有感兴趣的特征作为压力的函数的演变。我们的结果表明，在压缩时，正电子在比零压力下热化的时间更长。此外，它的亲和力随着压力升高而降低，表明它的湮灭与零压力不同。对正电子扩散常数的仔细检查表明，正电子在施加压力下扩散得更好。