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Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods
Arabian Journal of Chemistry ( IF 5.3 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.arabjc.2020.10.040
Asla Abdullah Al-Zahrani , Zulkarnain Zainal , Zainal Abidin Talib , Hong Ngee Lim , Araa Mebdir Holi , Noor Nazihah Bahrudin

Abstract The current work investigates the morphology, crystallinity and photoelectrochemical (PEC) performance of bismuth sulfide/silver sulfide/zinc oxide nanorods (Bi2S3/Ag2S/ZnO NRAs) photoelectrodes as prepared at different annealing temperature. ZnO NRAs was initially grown hydrothermally, deposited in sequence with Ag2S and Bi2S3 via successive ionic layer adsorption and reaction (SILAR) method before undergoing the annealing treatment. The optimised photoelectrode (Bi2S3/Ag2S/ZnO NRAs-400°C) possesses an optical bandgap of 1.60 eV extending the absorption edge of ZnO to visible light spectrum. The current-voltage characterization of Bi2S3/Ag2S/ZnO NRAs photoelectrodes revealed that the photocurrent density and photoconversion efficiency were strongly dependent on the annealing temperature. The PEC study shows that the photoelectrode annealed at 400°C achieved impressive photocurrent density of 12.95 mA/cm2 at +0.5 V (vs Ag/AgCl/saturated KCl) under 100 mW/cm2 illumination with superior photoconversion efficiency of 12.63%. This improvement is due to the cascade-designed band structure alignment of Bi2S3/Ag2S/ZnO/ITO and to the brilliant role of Ag2S as an intermediate layer that reduced random chance of electron-hole (e--h+) pairs recombination and improved the electrons collection efficiency. This work is highly anticipated to give contribution on further utilisation of Bi2S3/Ag2S/ZnO NRAs as a promising semiconductor material in PEC related applications.

中文翻译:

Bi2S3/Ag2S/ZnO新型三元异质结构纳米棒的光电化学性能增强

摘要 目前的工作研究了在不同退火温度下制备的硫化铋/硫化银/氧化锌纳米棒(Bi2S3/Ag2S/ZnO NRAs)光电极的形貌、结晶度和光电化学(PEC)性能。ZnO NRAs 最初是水热生长的,在进行退火处理之前,通过连续离子层吸附和反应 (SILAR) 方法与 Ag2S 和 Bi2S3 依次沉积。优化的光电极 (Bi2S3/Ag2S/ZnO NRAs-400°C) 具有 1.60 eV 的光学带隙,将 ZnO 的吸收边缘扩展到可见光光谱。Bi2S3/Ag2S/ZnO NRAs 光电极的电流-电压特性表明光电流密度和光转换效率强烈依赖于退火温度。PEC 研究表明,在 400°C 下退火的光电极在 100 mW/cm2 光照下在 +0.5 V(相对于 Ag/AgCl/饱和 KCl)下实现了 12.95 mA/cm2 的令人印象深刻的光电流密度,具有 12.63% 的卓越光电转换效率。这种改进是由于 Bi2S3/Ag2S/ZnO/ITO 的级联设计的能带结构排列,以及 Ag2S 作为中间层的出色作用,减少了电子-空穴 (e--h+) 对复合的随机机会并改善了电子收集效率。这项工作有望为进一步利用 Bi2S3/Ag2S/ZnO NRA 作为 PEC 相关应用中的有前途的半导体材料做出贡献。在 100 mW/cm2 照明下为 5 V(相对于 Ag/AgCl/饱和 KCl),具有 12.63% 的卓越光转换效率。这种改进是由于 Bi2S3/Ag2S/ZnO/ITO 的级联设计的能带结构排列,以及 Ag2S 作为中间层的出色作用,减少了电子-空穴 (e--h+) 对复合的随机机会并改善了电子收集效率。这项工作有望为进一步利用 Bi2S3/Ag2S/ZnO NRA 作为 PEC 相关应用中的有前途的半导体材料做出贡献。在 100 mW/cm2 照明下为 5 V(相对于 Ag/AgCl/饱和 KCl),具有 12.63% 的卓越光转换效率。这种改进是由于 Bi2S3/Ag2S/ZnO/ITO 的级联设计的能带结构排列,以及 Ag2S 作为中间层的出色作用,减少了电子-空穴 (e--h+) 对复合的随机机会并改善了电子收集效率。这项工作有望为进一步利用 Bi2S3/Ag2S/ZnO NRA 作为 PEC 相关应用中的有前途的半导体材料做出贡献。
更新日期:2020-12-01
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