Chemical vapor deposition (CVD) technology is a simple and flexible method used to prepare high-quality crystalline materials. Traditional CVD technology, based on pre-deposited thin catalyst metal, usually produces nanostructures instead of continuous films. In this work, a continuous GaN film on a monolayer boron nitride (h-BN) insertion layer is demonstrated using CVD technology. The experimental results and theoretical calculations indicate that abundant GaN nanocrystallites are firstly formed at the edges or grain boundaries of the monolayer h-BN by quasi-van der Waals epitaxy. Then, the vapor-solid mechanism will control further growth of the GaN nanocrystallites, causing them to merge into a continuous GaN film. Meanwhile, the CVD-grown GaN ultraviolet detector exhibits a relatively high responsivity with a value of 0.57 A W⁻¹ at 2 V. In this paper, a simple low-cost CVD method is proposed for preparing continuous films on two-dimensional materials for electronic and optoelectronic devices.

化学气相沉积（CVD）技术是一种用于制备高质量晶体材料的简单灵活的方法。基于预沉积的薄催化剂金属的传统CVD技术通常产生纳米结构而不是连续膜。在这项工作中，使用CVD技术展示了单层氮化硼（h-BN）插入层上的连续GaN膜。实验结果和理论计算表明，通过准范德华外延首先在单层h-BN的边缘或晶界形成大量的GaN纳米微晶。然后，气固机制将控制GaN纳米微晶的进一步生长，使它们融合成连续的GaN膜。同时，CVD生长的GaN紫外线检测器具有相对较高的响应度，值为0.57 AW在2 V时为^-1。在本文中，提出了一种简单的低成本CVD方法，以在电子和光电设备的二维材料上制备连续膜。