In this study, multishelled InP-based quantum dots (QDs) were synthesized using a phosphorus source tris(dimethylamino)phosphine [(DMA)₃P] and were applied to solution-processed QD light-emitting diode (QLED) devices. (DMA)₃P is not only a safe phosphorus source but is also a low-cost precursor for InP QDs. The quantum yield of the QDs increased from 71.0 to 81.8% by post-treatment with hexanethiol. The efficiency of the (DMA)₃P-based red InP QLEDs was enhanced by using chlorine-doped ZnMgO (Cl-doped ZnMgO) nanoparticles (NPs) for the electron transport layer (ETL), which improved the charge balance in QLEDs. The energy barrier was reduced from 0.21 to 0.03 eV between the emitting layer and ETL with the Cl-doped ZnMgO NPs compared to that of the ZnMgO NPs ETL, and the electron injection barrier from the cathode to ETL increased as well. The maximum external quantum efficiency of the red InP-based QLEDs improved from 1.8 to 4.0% by Cl-doping the ZnMgO NPs. This is the highest device performance ever reported for QLEDs with (DMA)₃P-based InP QDs. Employing the Cl-doped ZnMgO NPs for the ETL reduces the electron transport, balances the recombination of holes and electrons, and provides an efficient way of improving the charge balance in (DMA)₃P-based InP QLEDs for low-cost electroluminescent devices.

中文翻译：

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通过掺氯的ZnMgO电子传输层提高基于三（二甲基氨基）膦的红磷化铟量子点发光二极管的效率

在这项研究中，使用磷源三（二甲基氨基）膦[（DMA）₃ P]合成了多壳的基于InP的量子点（QD），并将其应用于溶液处理的QD发光二极管（QLED）器件。（DMA）₃ P不仅是安全的磷源，而且还是InP QD的低成本前体。通过用己硫醇进行后处理，量子点的量子产率从71.0增加到81.8％。（DMA）₃的效率通过将氯掺杂的ZnMgO（Cl掺杂的ZnMgO）纳米粒子（NPs）用于电子传输层（ETL）来增强P基红色InP QLED，从而改善了QLED的电荷平衡。与ZnMgO NPs ETL相比，掺有Cl的ZnMgO NPs在发射层和ETL之间的能垒从0.21降低到0.03 eV，并且从阴极到ETL的电子注入势垒也增加了。通过对ZnMgO NP进行Cl掺杂，红色InP基QLED的最大外部量子效率从1.8％提高到4.0％。对于具有（DMA）_3的QLED，这是有史以来最高的设备性能基于P的InP QD。为ETL采用掺Cl的ZnMgO NP可以减少电子传输，平衡空穴和电子的复合，并提供一种改善低成本电致发光器件的（DMA）₃ P基InP QLED中电荷平衡的有效方法。