Thin films of two types of high-entropy oxides (HEOs) have been deposited on 76.2 mm Si wafers using combinatorial sputter deposition. In one type of the oxides, (MgZnMnCoNi)O_x, all the metals have a stable divalent oxidation state and similar cationic radii. In the second type of oxides, (CrFeMnCoNi)O_x, the metals are more diverse in the atomic radius and valence state, and have good solubility in their sub-binary and ternary oxide systems. The resulting HEO thin films were characterized using several high-throughput analytical techniques. The microstructure, composition, and electrical conductivity obtained on defined grid maps were obtained for the first time across large compositional ranges. The crystalline structure of the films was observed as a function of the metallic elements in the composition spreads, that is, the Mn and Zn in (MgZnMnCoNi)O_x and Mn and Ni in (CrFeMnCoNi)O_x. The (MgZnMnCoNi)O_x sample was observed to form two-phase structures, except single spinel structure was found in (MgZnMnCoNi)O_x over a range of Mn > 12 at. % and Zn < 44 at. %, while (CrFeMnCoNi)O_x was always observed to form two-phase structures. Composition-controlled crystalline structure is not only experimentally demonstrated but also supported by density function theory calculation.

中文翻译：

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探索第一个高熵薄膜库：成分扩散控制的晶体结构

使用组合溅射沉积在 76.2 mm 硅晶片上沉积了两种类型的高熵氧化物 (HEO) 薄膜。在一种类型的氧化物(MgZnMnCoNi)O _x中，所有金属都具有稳定的二价氧化态和相似的阳离子半径。在第二种类型的氧化物(CrFeMnCoNi)O _x中，金属的原子半径和价态更加多样化，并且在其亚二元和三元氧化物体系中具有良好的溶解度。使用多种高通量分析技术对所得 HEO 薄膜进行了表征。首次在大的成分范围内获得了在定义的网格图上获得的微观结构、成分和电导率。观察到薄膜的晶体结构作为组成分布中金属元素的函数，即(MgZnMnCoNi)O _{x中的Mn和Zn以及(CrFeMnCoNi)O x}中的Mn和Ni 。观察到(MgZnMnCoNi)O _x样品形成两相结构，除了在(MgZnMnCoNi)O _x中在Mn > 12 at范围内发现单尖晶石结构之外。% 且 Zn < 44 at。%，而(CrFeMnCoNi)O _x总是观察到形成两相结构。成分控制的晶体结构不仅得到了实验证明，而且得到了密度函数理论计算的支持。