Controllable Thermal Oxidation and Photoluminescence Enhancement in Quasi-1D van der Waals ZrS3 Flakes,ACS Applied Electronic Materials

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Controllable Thermal Oxidation and Photoluminescence Enhancement in Quasi-1D van der Waals ZrS3 Flakes
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-11-03 , DOI: 10.1021/acsaelm.0c00788
Junqing Guo _{1,

2} , Jun Tao _{1,

2} , Zhouyang Zhang _{1,

2} , Linfeng Fei _{1,

2} , Ding Li ₃ , Jakub Jadwiszczak ₄ , Xiting Wang ₅ , Yuzheng Guo ₅ , Xiaxia Liao _{1,

2} , Yangbo Zhou _{1,

2}

Affiliation

In this study, we report on the thermal oxidation of few-layer ZrS₃ flakes as a function of temperature and heating time. We characterize the changes to the material crystal structure caused by the thermal treatment using atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and electrical transport measurements and link these results to the observed changes in optical contrast for on-substrate flakes. Importantly, we observe a very strong photoluminescence emission enhancement in the heated samples, with intensities comparable to those of direct-gap monolayer MoS₂. We attribute this enhancement to mid-gap states in the thermally synthesized oxides of zirconium which form on the flake surface. We show that this emission is isotropic, unlike that of the untreated ZrS₃, which unlocks an additional degree of freedom to the modulation of the optoelectronic properties of quasi-one-dimensional van der Waals materials.

中文翻译：

准1D van der Waals ZrS ₃薄片中的可控热氧化和光致发光增强

在这项研究中，我们报告了几层ZrS ₃薄片的热氧化与温度和加热时间的关系。我们表征了使用原子力显微镜，透射电子显微镜，拉曼光谱和电传输测量的热处理引起的材料晶体结构的变化，并将这些结果与所观察到的基板上薄片的光学对比度变化联系起来。重要的是，我们在加热的样品中观察到非常强的光致发光发射增强，其强度与直接间隙单层MoS _2的强度相当。我们将这种增强归因于薄片表面形成的热合成锆氧化物的中间能隙状态。我们表明，这种发射是各向同性的，与未经处理的ZrS _3的发射不同，ZrS ₃释放了对准一维范德华材料的光电特性进行调制的额外自由度。

更新日期：2020-11-25

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