Abstract The effect of the indium oxide (In2O3) dopant on the electrical properties of the lithium tantalate (LiTaO3) thin film-based sensor was investigated in this study. LiTaO3 thin film was made on p-type Si (100) substrates by applying the chemical solution deposition (CSD) method. The LiTaO3 thin film was annealed at the temperature of 850 °C for 15 h. Surface morphology and elemental characterization analysis were obtained by using SEM-EDX (scanning electron microscopy–energy-dispersive X-ray spectroscopy). Then, the dielectric constant value and the photoresistive characteristic of LiTaO3 thin film were measured to determine the effect of the In2O3 dopant on the electrical properties of the thin film. From the SEM-EDX measurement, it is observed that the surface of the thin film is still non-homogeneous; therefore, the electron flow will be obstructed. Based on the elemental atomic composition analysis, it appears that the Indium atoms have appeared in the LiTaO3 thin films doped by In2O3 2%, 4%, and 6%. From the results of thin film dielectric constant calculation, it can be seen that the dielectric constant value between undoped and In2O3-doped LiTaO3 thin film does not change, which is 2.44. The photoresistive value shows that the Indium dopant decreases the resistivity but increases the conductivity of the thin film. Based on the photoresistive characteristic measurement results, it can be concluded that the LiTaO3 thin film can be used as a light sensor, and In2O3dopant can increase the conductivity of the LiTaO3 thin film.

中文翻译：

---

氧化铟 (In2O3) 掺杂剂对 LiTaO3 薄膜传感器电学性能的影响

摘要 本研究研究了氧化铟 (In2O3) 掺杂剂对钽酸锂 (LiTaO3) 薄膜传感器电学性能的影响。通过应用化学溶液沉积 (CSD) 方法在 p 型 Si (100) 衬底上制备 LiTaO3 薄膜。LiTaO3 薄膜在 850°C 的温度下退火 15 小时。通过使用 SEM-EDX（扫描电子显微镜 - 能量色散 X 射线光谱）获得表面形貌和元素表征分析。然后，测量LiTaO3薄膜的介电常数值和光阻特性，以确定In2O3掺杂剂对薄膜电学性能的影响。从SEM-EDX测量可以看出，薄膜表面仍然不均匀；所以，电子流会受阻。根据元素原子组成分析，似乎在掺杂了 2%、4% 和 6% 的 In2O3 的 LiTaO3 薄膜中出现了铟原子。从薄膜介电常数计算结果可以看出，未掺杂和掺杂In2O3的LiTaO3薄膜之间的介电常数值没有变化，为2.44。光阻值表明，铟掺杂剂降低了电阻率，但增加了薄膜的导电性。基于光阻特性测量结果，可以得出结论，LiTaO3薄膜可以用作光传感器，In2O3掺杂剂可以提高LiTaO3薄膜的电导率。看来，In2O3 掺杂了 2%、4% 和 6% 的 LiTaO3 薄膜中出现了铟原子。从薄膜介电常数计算结果可以看出，未掺杂和掺杂In2O3的LiTaO3薄膜之间的介电常数值没有变化，为2.44。光阻值表明，铟掺杂剂降低了电阻率，但增加了薄膜的导电性。基于光阻特性测量结果，可以得出结论，LiTaO3薄膜可以用作光传感器，In2O3掺杂剂可以提高LiTaO3薄膜的电导率。看来，In2O3 掺杂了 2%、4% 和 6% 的 LiTaO3 薄膜中出现了铟原子。从薄膜介电常数计算结果可以看出，未掺杂和掺杂In2O3的LiTaO3薄膜之间的介电常数值没有变化，为2.44。光阻值表明，铟掺杂剂降低了电阻率，但增加了薄膜的导电性。基于光阻特性测量结果，可以得出结论，LiTaO3薄膜可以用作光传感器，In2O3掺杂剂可以提高LiTaO3薄膜的电导率。这是 2.44。光阻值表明，铟掺杂剂降低了电阻率，但增加了薄膜的导电性。基于光阻特性测量结果，可以得出结论，LiTaO3薄膜可以用作光传感器，In2O3掺杂剂可以提高LiTaO3薄膜的电导率。这是 2.44。光阻值表明，铟掺杂剂降低了电阻率，但增加了薄膜的导电性。基于光阻特性测量结果，可以得出结论，LiTaO3薄膜可以用作光传感器，In2O3掺杂剂可以提高LiTaO3薄膜的电导率。