The packaging technology for the medium‐voltage silicon carbide (SiC)‐metal oxide semiconductor field‐effect transistor (MOSFETs) has come a long way since its inception. Now, it is feasible to design half‐bridge power modules based on 10‐kV SiC‐MOSFETs for higher current applications. This paves the way for many application areas for these devices, particularly for medium‐voltage and high‐power applications. This paper presents a design of a modular medium‐voltage, high‐power isolated DC–DC converter enabled by these 10‐kV SiC‐MOSFETs‐based power modules. The design objectives are targeted at increasing the efficiency, power density, and interoperability. The proposed DC–DC converter is aimed for applications like DC distribution for the data centers, subsea power transmission, offshore wind farms, and photovoltaic energy transmission–distribution–coordination; electric ship DC power transmission; solid‐state distribution transformer, etc. © 2020 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.

中文翻译：

---

基于10kV SiC-MOSFET（Gen-3）半桥模块的隔离式双向DC-DC转换器模块，适用于中压大功率应用

自诞生以来，中压碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）的封装技术已经走了很长一段路。现在，可以设计出基于10kV SiC-MOSFET的半桥功率模块，以用于更高电流的应用。这为这些设备的许多应用领域铺平了道路，尤其是中压和大功率应用。本文介绍了由这些基于10kV SiC-MOSFET的电源模块支持的模块化中压，高功率隔离式DC-DC转换器的设计。设计目标旨在提高效率，功率密度和互操作性。拟议的DC-DC转换器适用于数据中心的DC分配，海底电力传输，海上风电场，光伏能源的传输-分配-协调；电动船直流输电；固态配电变压器等。©2020日本电气工程师学会。由Wiley Periodicals LLC发布。