We report the interaction of Mn5Ge3 ultra-thin films with GaAs (111)B substrates under distinct initial conditions by monitoring in-situ the in-plane crystal structure and surface chemistry using reflection high energy electron diffraction and X-ray photoelectron spectroscopy. The order of Mn and Ge adatoms arriving on the GaAs surface determines the interface elemental stoichiometry, crystalline quality, and films thermal stability. When the growth starts by opening the Mn and Ge cells simultaneously is sufficient to inhibit the strong reactions with the GaAs (111) surface. First-principles calculations show that the Mn5Ge3 epitaxial growth on the GaAs (111)B is feasible, with a lattice mismatch of 2.3 % which is in agreement with the value of at least 2.6 % estimated within the accuracy of our RHEED measurements. Results have implications in the design of MBE growth strategies to achieve Mn5Ge3/GaAs semiconductor heterostructure.

中文翻译：

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GaAs (111)B 衬底上的 Mn5Ge3 超薄膜：初始生长条件的影响

我们通过使用反射高能电子衍射和 X 射线光电子能谱原位监测面内晶体结构和表面化学，报告了 Mn5Ge3 超薄膜与 GaAs (111)B 衬底在不同初始条件下的相互作用。到达 GaAs 表面的 Mn 和 Ge 吸附原子的顺序决定了界面元素化学计量、晶体质量和薄膜热稳定性。当通过同时打开 Mn 和 Ge 电池开始生长时，足以抑制与 GaAs (111) 表面的强烈反应。第一性原理计算表明，在 GaAs (111)B 上进行 Mn5Ge3 外延生长是可行的，晶格失配为 2.3%，这与在我们的 RHEED 测量精度范围内估计的至少 2.6% 的值一致。