Here, we report the photonic and luminescence characteristics of the lasing Nd_xGa_1-xAs quantum dots prepared via N-diphenyl-N-bis3-methylphenyl-1-biphenyl-4-diamine assisted colloidal approach for laser diode potential application. The prepared Nd_xGa_1-xAs quantum dots showed cubic crystal structure as evidenced from XRD. The optical behavior showed a redshift of the absorbance and emission spectra, and a decrease of the optical bandgap from 2.4 eV to 1.82 eV. The Nd-atomic dopant raised the emission spectral intensity and reduced the bandwidth of the emitted light. The Nd-dopants suppress the surface defects of the GaAs nanocrystals and creates populating levels within the GaAs bandgap. The Nd_xGa_1-xAs quantum dots exhibited quantum yield of 91 %. Therefore, the Nd_xGa_1-xAs nanocrystal quantum dots most probably employed as efficient lasing materials for optical amplifier and laser diodes applications.

在这里，我们报告激光Nd _x Ga _1-x As量子点的光子和发光特性，该量子点是通过N-二苯基-N-双3-甲基苯基-1-联苯基-4-二胺辅助胶体方法制备的，用于激光二极管电势。制备的Nd _x Ga _1-x As量子点显示出立方晶体结构，这是由XRD证实的。光学行为显示了吸收光谱和发射光谱的红移，并且光学带隙从2.4 eV降低到1.82 eV。Nd原子掺杂剂提高了发射光谱强度并减小了发射光的带宽。Nd掺杂剂可抑制GaAs纳米晶体的表面缺陷，并在GaAs带隙内产生填充能级。Nd _x Ga_1-x As量子点的量子产率为91％。因此，Nd _x Ga _1-x As纳米晶体量子点最有可能被用作光学放大器和激光二极管应用的有效激光材料。