Abstract Current-voltage (I–V) measurements were carried out on undoped and iron (Fe) doped n-silicon (n-Si) to establish and study a change in electrical properties of the material-based diodes with Fe doping concentration. Fe doping was achieved by implantation at the energy of 160 keV to fluences of 1015, 1016 and 1017 ion/cm2. The obtained results indicated that the diodes were well fabricated and Fe doping resulted in a diode behaviour changing from normal exponential to ohmic I–V behaviour. This ohmic behaviour was explained in terms of Fe-induced defect levels that were positioned at the centre of the energy gap. An I–V ohmic region increased with fluence indicating that the density of defect levels has increased with Fe implantation fluence. A change in diode conduction mechanism domination and parameters with fluence were investigated. The obtained I–V properties of Fe doped Si-based diodes were similar to those of the diodes that were fabricated on radiation-hard materials indicating that Fe, too, is a promising dopant in a quest to improve radiation-hardness of Si to be used in high energy physics experiments.

中文翻译：

---

铁注入硅基肖特基二极管的电流-电压特性

摘要 对未掺杂和铁 (Fe) 掺杂的 n-硅 (n-Si) 进行电流-电压 (I-V) 测量，以建立和研究基于材料的二极管的电性能随 Fe 掺杂浓度的变化。Fe 掺杂是通过以 160 keV 的能量注入到 1015、1016 和 1017 离子/平方厘米的注量来实现的。获得的结果表明二极管制造良好，Fe 掺杂导致二极管行为从正常指数变为欧姆 I-V 行为。这种欧姆行为可以用位于能隙中心的 Fe 诱导缺陷水平来解释。I-V 欧姆区随着注量增加，表明缺陷水平的密度随着 Fe 注入注量而增加。研究了二极管传导机制支配和参数随注量的变化。