Nanostructured thin films on a silicon substrate were obtained by high-frequency pulse-periodic laser action (f ~ 10–15 kHz) with wavelength λ = 1.064 μm and power density q = 85 MW/cm² on zinc oxide ceramic doped with scandium oxide in a vacuum chamber with pressure p = 2·10^–2 mm Hg. The morphology of the obtained films was studied by atomic-force microscopy. Features of the transmission spectra in the visible and near and middle infrared regions were shown. The luminescence spectra obtained by excitation at various wavelengths were practically unchanged. The electrophysical properties of the ZnO + 0.9% Sc₂O₃/Si heterostructure were analyzed. It was established that the main conduction mechanism is current limited by space charge in an oxide film with deep traps.

在掺有氧化scan的氧化锌陶瓷上，通过高频脉冲周期激光作用（f〜10–15 kHz），在波长为λ= 1.064μm，功率密度q = 85 MW / cm ^{2的条件下}，获得了硅基板上的纳米结构薄膜。在真空室中，压力p = 2·10 ^–2 mm Hg。通过原子力显微镜研究获得的膜的形态。显示了可见光，近红外和中红外区域的透射光谱特征。通过在各种波长下激发而获得的发光光谱实际上没有变化。ZnO + 0.9％Sc ₂ O ₃的电物理性质分析了/ Si异质结构。已经确定，主要的传导机制是电流受具有深陷阱的氧化膜中的空间电荷所限制。