Memory devices that are capable of logic functions have shown great potential in constructing non-von Neumann parallel computing architecture. Here, we proposed a universal nonvolatile logic device, utilizing the amorphous–crystalline phase transition behavior and phase change control of ferromagnetism property of Mn-doped GeTe phase change magnetic material (PCMM). The materials implication (IMP) logic in one step and sequential NAND logic were presented theoretically, based on which the functional completeness of Boolean logic could be realized. The logic operating results can be stored directly in the residual magnetization of the PCMM. This proposal may promote the design and future experimental implementation of next generation electromagnetic devices for data storage and computing.

中文翻译：

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基于相变磁性材料的通用非易失性逻辑器件的提案

具有逻辑功能的存储器件在构建非冯诺依曼并行计算架构方面显示出巨大潜力。在这里，我们提出了一种通用的非易失性逻辑器件，利用 Mn 掺杂的 GeTe 相变磁性材料 (PCMM) 的铁磁性的非晶-晶体相变行为和相变控制。理论上提出了一步材料蕴涵（IMP）逻辑和顺序NAND逻辑，在此基础上可以实现布尔逻辑的功能完备性。逻辑运算结果可以直接存储在PCMM的剩磁中。该提议可能会促进用于数据存储和计算的下一代电磁设备的设计和未来的实验实施。