The structural and photoelectrical properties of Al-doped ZnO (AZO)/SiC/p-Si and AZO/SiC/n-Si heterojunctions, fabricated at low temperature by pulsed laser deposition, were investigated by means of a number of techniques. Raman analysis indicates that SiC layers have the cubic 3C-SiC phase, whilst X-ray diffraction measurements show that AZO films exhibit a hexagonal wurtzite structure, highly textured along the c-axis, with average crystallites size of 35.1 nm and lattice parameter c of 0.518 nm. The homogeneous and dense surface morphology observed by scanning electron microscopy was confirmed by atomic force microscopy images. Moreover, UV–Vis-NIR spectra indicated a high transmittance of SiC films in the region 550–2500 nm, about 80% transmittance of AZO films in the 450–1000 nm region, and optical band gaps in good agreement with literature. These results prove that pulsed laser deposition is a low-cost technique suitable to grow SiC and AZO films with excellent material properties. The effect of the Si doping on the current transport mechanisms in the heterojunctions was investigated by current-voltage measurements under dark and white light illumination. Both heterojunctions exhibit a diode behaviour and relatively low leakage current, with a noticeable superiority for the AZO/SiC/n-Si device also under illumination, with an illumination/dark ratio of about 400. Our results indicate that the AZO/SiC/p-Si heterojunctions, with higher values of ideality factor, series resistance and lower rectifying ratio, have a complex current transport compared to the diodes grown on n-type Si. Additionally, capacitance-voltage measurements and Mott-Schottky plot allowed to determine a built-in potential of 0.51 V for the Al/AZO/SiC/p-Si/Al device.

Al掺杂ZnO（AZO）/ SiC / p -Si和AZO / SiC / n的结构和光电性能通过多种技术研究了通过脉冲激光沉积在低温下制造的-Si异质结。拉曼分析表明SiC层具有立方3C-SiC相，而X射线衍射测量表明AZO膜具有六方纤锌矿结构，沿c轴高度织构化，平均晶粒尺寸为35.1 nm，晶格参数c为0.518纳米 通过原子力显微镜图像确认了通过扫描电子显微镜观察到的均匀且致密的表面形态。此外，UV-Vis-NIR光谱表明550-2500 nm区域的SiC薄膜透射率高，450-1000 nm区域的AZO薄膜透射率约为80％，并且光学带隙与文献一致。这些结果证明脉冲激光沉积是适合于生长具有优异材料性能的SiC和AZO膜的低成本技术。通过在暗光和白光照射下进行电流-电压测量，研究了Si掺杂对异质结中电流传输机制的影响。两种异质结均具有二极管性能和相对较低的泄漏电流，对于AZO / SiC /具有明显的优势n -Si器件也处于照明状态，照明/暗比约为400。我们的结果表明，理想系数，串联电阻和整流比较低的AZO / SiC / p -Si异质结具有复杂的电流与在n型Si上生长的二极管相比，其迁移率更高。此外，电容电压测量和Mott-Schottky图可确定Al / AZO / SiC / p-Si / Al器件的内置电势为0.51V。