We propose, investigate, and demonstrate a pure and simple dielectric probe operating in the sub-terahertz range with an example band of interest 190–220 GHz. High-resistivity silicon technology is deployed for this non-TEM mode probe development as it presents a viable low-loss material. A T-shape alignment dowel was used to integrate the silicon probe with the waveguide block. The probe can be used to measure and characterize the low permittivity-based dielectric waveguide transmission line and its building components free from the use of any transition structures and TEM-mode probes. For demonstration, the silicon probe was used to measure a substrate integrated image guide and its components in the range of 190–220 GHz. A substrate integrated image guide (SIIG)-based thru, reflect, and line (TRL) calibration kit was developed, and a two-tier TRL calibration was used to characterize the SIIG.

中文翻译：

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亚太赫兹范围内的硅探针测量和表征

我们提出、研究并演示了一种在亚太赫兹范围内运行的纯介电探头，感兴趣的示例频段为 190-220 GHz。这种非 TEM 模式探头开发采用了高电阻率硅技术，因为它提供了一种可行的低损耗材料。使用 T 形定位销将硅探针与波导块集成在一起。该探头可用于测量和表征基于低介电常数的介质波导传输线及其构建组件，而无需使用任何过渡结构和 TEM 模式探头。为了演示，硅探头用于测量 190-220 GHz 范围内的基板集成图像引导及其组件。开发了基于基板集成图像引导 (SIIG) 的直通、反射和线 (TRL) 校准套件，